Chinese translation for "载流子迁移率"

charge carrier mobility

Related Translations:

载流子:  [固体物理] carrier; charge carrier; current carrier

俘获载流子:  capture carrier

载流子产生:  carrier generation

空穴载流子:  hole carrier

载流子能量:  carrier energy

过剩载流子:  excess carriers

反转载流子:  inversion carrier

正电荷载流子:  positive carrierpositive charge carrier

漂移载流子:  drift carrier

载流子库:  carrier reservoir

Example Sentences:

	1.	We represent a temperature model of surface carrier mobility of short channel most after thinking about kinds of dispersion effect 在考虑了各种散射效应对迁移率的影响后，提出了短沟道most表面载流子迁移率的温度模型。
	2.	Both the theoretical simulation and experiment results show that the relationship between eff and eeff in strained - si is similar to the one in bulk si . the mobility reaches its maximum when eeff equals to 2 105v / cm 理论分析和实验结果表明,应变硅载流子迁移率与横向电场eeff的函数关系与体硅材料类似,峰值迁移率所对应的eeff为2 105v / cm 。
	3.	Many organic composition with conjugate structure can be used as oel materials . 8 - hydroxylquinoline aluminium ( alq3 ) is one of the best oel materials with good film - formation and thermal , excellent electron - transporting ability 8 -羟基喹啉铝( alq3 )是目前最有效的有机电致发光材料之一，具有良好的成膜性、较高的载流子迁移率以及较好的热稳定性。
	4.	Carrier will be capture by trap , the number of electric carrier will decrease . the trap hold back carrier to move from crystal to other crystal . it influences the electrical properties of tft 陷阱在浮获载流子之前是电中性的,但是在俘获载流子之后就带电了,在其周围形成一个多子势区,阻挡载流子从一个晶粒向另一个晶粒运动,导致载流子迁移率下降,导致tft的电学性能下降。
	5.	The hetrojunction device fabricated with sige material has shown great advantages over bulk sample in many aspects : higher carrier mobility , larger transconductance , stronger drive capability and hence faster circuit speed 与体si器件相比,采用sige材料的异质结器件已经在许多方面显示出了强大的优势:譬如更大的载流子迁移率，更大的跨导，更强的电流驱动能力以及更快的电路速度等等。
	6.	When these organic materials meet each other they may form exciplex which introduce new spectral lines and reduce original ones . we compared the spectra of samples ito / tvk : tpb / alg3 / al and ito / pvk : tpb / mgf / alg3 / al . we found that the spectrum from exciplex is much reduced 有机材料的载流子迁移率低，不可能实现碰撞离化，它的发光只能是和阴极射线管中的发光一样，来源于从sioz加速出来的电子对有机材料的直接碰撞。
	7.	The recent development of organic electron transport materials are reviewed as well . several technologies for charge carrier mobility measurement are summarized and compared , and a series of basic principles for designing high - performance organic electron transport materials are suggested as well 本章还重点综述了有机电子传输材料研究的最新进展，总结和比较了有机材料载流子迁移率的测试方法，并提出了设计高性能有机电子传输材料的若干原则。
	8.	In this paper , the subband structure in the inversion layer is constructed by solving the self - consistent schr ? dinger equation , thus the carrier effective mass and scattering rate can be obtained . furthermore , taking account for the carrier density in each subband , we establish carrier mobility model in strained - si mosfet 本文通过求解自洽薛定谔方程,确定了应变硅mosfet反型层的子能带结构,在此基础上经进一步计算得到子能带内载流子的有效质量和散射几率,综合考虑各子能带上的载流子的浓度分布,建立了应变硅mosfet载流子迁移率的解析模型。
	9.	Poly - crystallization silicon thin film transistor ( p - si tft ) addressing liquid crystal display has been currently the research and development focus in the field of flat panel displays , as it is most feasible approach to high resolution , high integration and low power consumption as a result of its high aperture ration . there are less number interface of the crystal grain , lower metal impurity and higher mobility in the electric current director , the milc p - si tft has been the research focus in the fields of amlcd , projection display , oled etc . there are vast dangling bonds and bug 多晶硅薄膜晶体管( p - sitft )液晶显示器可以实现高分辨率、高集成度、同时有效降低显示器的功耗,因而成为目前平板显示领域主要研究方向;而以横向晶化多晶硅为有源层的tft由于在导电方向有更少的晶界、更低的金属杂质污染、更高的载流子迁移率而成为目前有源矩阵液晶显示领域、投影显示、 oled显示等领域研究的热点。
	10.	Secondly , we measured the electrical properties of the ion - implanted samples by hall method ( square carrier concentration , square resistance and carrier mobility ) . after comparing and analyzing , we can know that the electrical properties were affected by the difference of mn dose , the implantation of c and the annealing temperature 其次，利用霍尔测试方法测量了每种离子注入样品的电性质(方块载流子浓度、方块电阻及载流子迁移率) ，通过比较分析了解到mn元素注入剂量、 c元素的注入以及退火温度的不同，都会对样品的电性质产生影响。

Similar Words：

"载流子漂" Chinese translation, "载流子漂移速度" Chinese translation, "载流子漂移型电晶体" Chinese translation, "载流子漂移型晶体管" Chinese translation, "载流子屏蔽" Chinese translation, "载流子寿命" Chinese translation, "载流子输送" Chinese translation, "载流子跃过时间" Chinese translation, "载流子注入" Chinese translation, "载流子注入电发光" Chinese translation