载流子迁移率 meaning in Chinese
charge carrier mobility
Examples
- We represent a temperature model of surface carrier mobility of short channel most after thinking about kinds of dispersion effect
在考虑了各种散射效应对迁移率的影响后，提出了短沟道most表面载流子迁移率的温度模型。 - Both the theoretical simulation and experiment results show that the relationship between eff and eeff in strained - si is similar to the one in bulk si . the mobility reaches its maximum when eeff equals to 2 105v / cm
理论分析和实验结果表明,应变硅载流子迁移率与横向电场eeff的函数关系与体硅材料类似,峰值迁移率所对应的eeff为2 105v / cm 。 - Many organic composition with conjugate structure can be used as oel materials . 8 - hydroxylquinoline aluminium ( alq3 ) is one of the best oel materials with good film - formation and thermal , excellent electron - transporting ability
8 -羟基喹啉铝( alq3 )是目前最有效的有机电致发光材料之一，具有良好的成膜性、较高的载流子迁移率以及较好的热稳定性。 - Carrier will be capture by trap , the number of electric carrier will decrease . the trap hold back carrier to move from crystal to other crystal . it influences the electrical properties of tft
陷阱在浮获载流子之前是电中性的,但是在俘获载流子之后就带电了,在其周围形成一个多子势区,阻挡载流子从一个晶粒向另一个晶粒运动,导致载流子迁移率下降,导致tft的电学性能下降。 - The hetrojunction device fabricated with sige material has shown great advantages over bulk sample in many aspects : higher carrier mobility , larger transconductance , stronger drive capability and hence faster circuit speed
与体si器件相比,采用sige材料的异质结器件已经在许多方面显示出了强大的优势:譬如更大的载流子迁移率，更大的跨导，更强的电流驱动能力以及更快的电路速度等等。