Chinese translation for "氮化硅薄膜"
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- silicon nitride film
Related Translations:
局部氮化: selective nitriding 液体氮化: bath nitridingwet nitriding 氮化电炉: nitriding electric furnace
- Example Sentences:
| 1. | Preparation and properties of si3n4 films on sapphire and si substrates
蓝宝石和硅衬底上氮化硅薄膜的制备和性能研究 | | 2. | The influence of deposition parameters on chemical structure and optical properties of silicon carbonitride film
沉积参数对碳氮化硅薄膜化学结构及光学性能的影响 | | 3. | Sinx thin film can improve the minor carrier lifetime of both mono and poly silicon by the simultaneous surface and bulk passivation
9 ）的提高；先沉积氮化硅薄膜再氢等离子体处理能得到更好的钝化效果。 | | 4. | The experiments indicate that the deposition rate will increase with the increase of the flow ratio of sihu / nhs , slightly decrease with the increase of substrate temperate , and increase obviously with the increase of rf power
氮化硅薄膜的折射率随硅烷氨气流量比增大而增大，随温度升高而略有增加，随淀积功率增大而略为降低。 | | 5. | The results show that the thermal diffusivity of thin film is smaller than its corresponding bulk material , and with the decreasing of the thickness , the thermal diffusivity also decreasing
)的二氧化硅薄膜、氮化硅薄膜、多晶硅薄膜的热扩散率，实验结果表明，薄膜的热扩散率比其体材料的要小，并且随着薄膜厚度的减小，热扩散率也减小。 | | 6. | The tested materials include ( 100 ) silicon wafer , ( 110 ) silicon wafer , poly - silicon thin film , dry oxidized silicon dioxide thin film , wet oxidized silicon dioxide thin film , lto thin film , standard lpcvd silicon nitride film , low stress lpcvd silicon nitride film , alumni nitride film , zinc oxide film etc . in the nanoindentation experiment of the single crystal silicon , two different mechanical phases are observed at different indentation depth
用纳米压入法对( 100 )单晶硅及( 110 )单晶硅、多晶硅薄膜、干氧薄膜、湿氧薄膜、 lto薄膜、标准氮化硅薄膜、低应力氮化硅薄膜、氮化铝薄膜、氧化锌薄膜等重要材料的杨氏模量和纳米硬度进行了系统地测量。报道了单晶硅在压入过程中观测到的两个力学相的变化。 | | 7. | Both hydrogen plasma and sinx thin film can effectively enhance the short circuit current density of mono and poly silicon solar cells , which cause the improvement of the absolute transfer efficiency about 0 . 5 % ~ 2 . 9 % . depositing sinx thin film followed by hydrogen plasma treatment will result in better passivation effect . the thickness of sinx thin film will decrease and the refractive index will increase after annealing
经过薄膜后退火处理发现，氮化硅薄膜经热处理后厚度降低，折射率升高，但温度达到1000oc时折射率急剧降低；沉积氨化硅薄膜后400oc退火可以促进氢扩散，提高钝化效果；超过400oc后氢开始逸失，晶体硅材料中的少子寿命急剧下降； rtp （快速热处理）处理所导致氢的逸失比常规退火处理显著。 | | 8. | Current researches , applications , preparation and structure of si3n4 are summarized in this paper . a new conclusion is drawn that silicon wafer can react with nitrogen at the temperature higher than 1100 and in super - pure nitrogen by direct - nitridation of silicon at the temperature from 800 to 1200 . the prepared silicon nitride samples are tested by xps ( x - ray photoelectron spectroscopy ) , sem ( scanning electron microscopy ) , optical microscopy , xrd ( x - ray diffraction ) and edx ( energy dispersive x - ray analysis )
通过硅片在800到1200各个温度和各种氮气气氛下的氮化处理的实验结果，报道了不同与其他研究者的氮化条件，硅片在氮气保护的热处理中的氮化条件为：高于1100的温度和高纯氮的气氛条件，同时对该氮化硅薄膜进行了金相显微镜、扫描电镜( sem ) 、 x射线衍射仪( xrd ) 、 x射线光电子谱( xps ) 、 x射线能谱仪( edx )和抗氧化性等测试和分析。 | | 9. | By the pecvd ( plasma enhanced chemical vapor deposition ) system and the reactants of silane and ammonia , silicon nitride thin film with excellent anti - reflective and passivation effects was prepared . the relatively optimum parameters for depositing sinx thin film and the basic physical and chemical properties of sinx were investigated . the effects of substrate temperature , the flow ratio of silane over ammonia and the rf power on the refractivity and deposition rate were researched
实验表明，氮化硅薄膜的沉积速率随硅烷氨气流量比增大而增大，随温度升高而略有降低，随淀积功率增大而明显增加；在衬底温度300 ，射频功率20w和硅烷氨气流量比为1 ： 3的条件下氮化硅薄膜的沉积速率大约为8 . 6纳米分。 | | 10. | However , the refractive index will increase with the increase of the flow ratio of sifu / nhs , slightly increase with the increase of substrate temperate , and decrease with the increase of rf power . by measuring the passivation results of hydrogen plasma and sinx thin film , we found an evident improvement of minor carrier lifetime in polycrystalline silicon after hydrogen plasma treatment , although it has little to do with the annealing temperature and time . the hydrogen contained in sinx thin film can enhance the carrier mobility of monocrystalline silicon , but after annealing at high temperature the mobility turns down
通过测试氢等离子体钝化和氮化硅薄膜钝化的效果，实验还发现氢等离子体处理对多晶硅材料的少子寿命提高作用比较明显，但是这种提高作用与处理温度以浙江大学硕士学位论文王晓泉2003年5月及时间的关系不大；氨化硅薄膜中的氢对单晶硅的载流子迁移率提高有一定作用，但经过高温处理后这种作用消失；氮化硅薄膜能提高单晶硅和多晶硅的少子寿命，具有表面钝化和体钝化的双重作用；氢等离子体和氮化硅薄膜都能有效地提高单晶和多晶电池的短路电流密度，进而使电池效率有不同程度（绝对转换效率0 |
- Similar Words：
- "氮化钙" Chinese translation, "氮化钢" Chinese translation, "氮化铬" Chinese translation, "氮化铬析出" Chinese translation, "氮化硅" Chinese translation, "氮化硅层衬底" Chinese translation, "氮化硅钝化" Chinese translation, "氮化硅工艺" Chinese translation, "氮化硅基切削工具" Chinese translation, "氮化硅镁" Chinese translation
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