载流子产生 meaning in Chinese

carrier generation

Under hot carrier stress , device degradation is the consequence of hot carrier induced defect generation locally at drain side
在热载流子应力条件下,器件的退化主要是由于在漏极附近由热载流子产生的损伤缺陷引起的。
Account for the high electrical field induced from the high applied voltage relative to small dimension device , the mechanism of hot - carrier generation is analysed , the si - h bond broken model for hot - carrier injection and interface states generation is deduced and the substrate current model is developed
基于mosfet偏压不能按比例缩小所导致的高电场，对mosfet的热载流子产生机理进行了分析，导出了热载流子注入所引起的界面态的si - h健断裂模型，并建立了表征器件热载流子效应的衬底电流模型。