俘获载流子 meaning in Chinese
capture carrier
Examples
- Carrier will be capture by trap , the number of electric carrier will decrease . the trap hold back carrier to move from crystal to other crystal . it influences the electrical properties of tft
陷阱在浮获载流子之前是电中性的,但是在俘获载流子之后就带电了,在其周围形成一个多子势区,阻挡载流子从一个晶粒向另一个晶粒运动,导致载流子迁移率下降,导致tft的电学性能下降。 - The experimental results show that the surface charging is related with the pre - flashover events , the pre - flashover events can bring the change of surface charge distribution . these may be attributed to the micro - discharge caused by the traps in insulator . the charge carriers can be captured by traps , a space electric field will be set up by the trap centers , and the combined electric field may exceed the breakdown electric field of local area , then the micro - discharge will be initiated
分析表明，反向预闪络现象与材料的陷阱分布有关，试样中电极附近的陷阱中心俘获载流子后所形成的空间电场的作用是产生这一现象的原因；预闪络现象和表面带电现象都是由于绝缘子表面陷阱中心俘获载流子形成空间电场造成局部场强过强引发的局部放电形成的。 - Sixteen sup - processed from 110k to 300k were found . the range of trap energy is from 0 . 19ev to 0 . 34ev . the maximum of the initial density distribution of the carrier in the traps locates 0 . 23ev , and the curve deviated from guass type
本文采用一种tl曲线的自动分解技术，对硅橡胶辐照老化tl曲线进行了自动分峰，结果发现在110k ~ 300k的温度范围内有16个子过程，其陷阱活化能变化范围为0 . 19 ~ 0 . 34ev ，被陷阱俘获载流子初始浓度的分布在0 . 23ev处具有极大值，且呈偏离高斯型的分布。