热载流子 meaning in Chinese
hot carrier
hot carrior
Examples
- Stress - dependent hot carrier degradation for pmosfets structure under stress mode vg
2应力模式下应力相关的热载流子退化 - A new hot - carrier - induced tddb model of ultra - thin gate oxide is reported in this dissertation
本文提出了一个全新的热载流子增强的超薄栅氧化层经时击穿模型。 - Hot - carrier induced oxide breakdown shows different characteristics compared with that induced by conventional fn stress
与通常的fn应力实验相比较，热载流子导致的超薄栅氧化层击穿显示了不同的击穿特性。 - Under hot carrier stress , device degradation is the consequence of hot carrier induced defect generation locally at drain side
在热载流子应力条件下,器件的退化主要是由于在漏极附近由热载流子产生的损伤缺陷引起的。 - Therefore , the solution to the hot - carrier degradation of mos circuits is obtained . the other hot - carrier immunity techniques such as
对抗热载流子退化的mos器件lddnghtlydopeddrain ）结构及栅氧化层加固技术也作了简单的介绍。