| 1. | So to shorten annealing temperature and time is a vital issue
因此，降低退火温度，缩短退火时间是一个急待解决的问题。 |
| 2. | High anneal temperature and long anneal time do good on increasing the size and density of silicon nano - crystals
退火后薄膜中的晶粒尺寸和密度都有所提高，退火温度升高或退火时间延长都有助于结晶状态的改善。 |
| 3. | The effect of the annealing temperature and duration on the structural and optical properties of the znse and znte films was also investigated
并通过对zno - si进行不同退火时间和退火温度的实验，获得了质量较好的znse和znte薄膜。 |
| 4. | The visible optical absorption of the film increases with increasing annealing time , coating - annealing time and concentration of the starting solution
样品的可见光区光吸收率随着初始溶液浓度、退火时间、涂膜厚度的增加而增加。 |
| 5. | Both the size and density of oxygen precipitation increase with the annealing time , and the size of oxygen precipitation decrease with the increase of the annealing temperature
随着退火时间的延长氧沉淀尺寸增大，密度略有增加；随着退火温度的升高，氧沉淀尺寸相对减小。 |
| 6. | After dealing with post heating at the same deposit temperature , the average of transmission and reflectance of the films are smaller than unannealed ones but eopt is enlarged
相同沉积温度下制备的薄膜样品经过不同退火温度和退火时间处理后，薄膜的平均透过率和平均反射率都比退火前下降，光学能隙变大。 |
| 7. | In the experiments , we also found the - sources flow rate , temperate of the substrates , annealing time and annealing temperature have an important infuence to epitaxial quality of the films
在实验过程中，我们也发现-族源气体的流量比、衬底温度、退火时间和退火温度对外延晶体的生长质量也有重要的影响。 |
| 8. | Films . the films grown at 200 , annealed for 5min at different temperatures ranged from 280 to 820 are carefully compared to study the effect of annealing temperature . the film acquired at the highest
在沉积温度为200 ，退火时间5min时，改变退火温度得到一组薄膜，研究退火温度对超导薄膜性质的影响，得到了转变温度-退火温度曲线。 |
| 9. | The latter structure is composed of polycrystalline graphite in fact . a large amount of sic > 2 single crystals with the size of lonm appears in the film when the time of the post - heating is increased to five hours
当退火时间延长到5个小时，薄膜的结晶度和600退火一个小时的薄膜相类似，不过，薄膜中大量存在的是10nm左右的sio2晶粒。 |
| 10. | By analyzing the microstructure and phase composition of sm - fe alloy annealed and nitrided for different time using scanning electron microscopy and x - ray diffraction technique , the optimum values for the annealing time and the nitriding time is determined
通过对不同退火时间和氮化时间下材料的扫描电子显微分析和x -射线衍射分析，确定了最佳的退火时间和氮化时间。 |
