| 1. | Non - stoichiometry related deep level defects in semi - insulating inp
半绝缘磷化铟中与非化学配比有关的深能级缺陷 |
| 2. | Test method for characterizing semiconductor deep levels by transient capacitance techniques
半导体中深能级的瞬态电容.测试方法 |
| 3. | Influence of deep level defects on electrical properties and defect control in semi - insulating inp
中深能级缺陷对电学性质的影响和缺陷的控制 |
| 4. | Deep level defects is one of factors responses for the distribution of mesfet threshold voltage
我们认为这一现象与si gaas衬底深能级缺陷有关。 |
| 5. | Test method for deep level el2 concentration of undoped semi - insulating monocrystal gallium arsenide by measurement infrared absorption method
非掺杂半绝缘砷化镓单晶深能级el2浓度红外吸收测试方法 |
| 6. | Spb - fwm forms the charge grating in fe - ion deep trap , while tir - fwm builds up the charge grating in the ce - ion deep trap
Spb - fwm形成了fe离子深能级上的载流子光栅，而tir - fwm形成了ce离子深能级的载流子光栅。 |
| 7. | The effective excite wavelength range is 350 - 355nm for the exciton - exciton collision peak and we observed a blue emission peak at about 472nm caused by zinc vacancy . 3
对激子-激子碰撞峰来说,有效的激发波长在350 - 355nm处,同时在472nm左右存在有一个由锌空位造成的深能级的蓝光发射峰。 |
| 8. | Sppc grating at 790nm mainly attributes to the charge grating in ce - ion deep trap while the fe - ion deep trap contributes more at 532nm wavelength than that at 790nm
利用该模型分析认为： 790nm激光泵浦时位相共轭光栅主要依赖ce离子深能级，而532nm激光泵浦时fe离子深能级的贡献比在790nm时大。 |
| 9. | Substrate slices of uniform electrical properties are necessary for integrated circuit device fabrication . at present there are variations in electrical properties across substrate slices . these are associate with deep levels , in particular el2 , which is generally attributed to antisite defect complexes and considered to be related to grown - in dislocations formed by thermal stresses
研究证明， si - gaas衬底电学特性的不均匀与材料中深能级微缺陷，特别是el _ 2 (深能级施主，被认为是as的反位缺陷的复合体)有极大的关系，而这些深能级微缺陷又与热应力形成的长入位错有密切联系。 |
| 10. | The high density dislocations behave like deep - level donors and the dislocations scattering is considerable at low temperature especially . besides , when the insb buffer layer thickness became 80nm , the roughness of insb epilayer increased . the initial stage of insb growth on gaas substrate is
透射电子显微镜发现,在insb / gaas薄膜的界面处分布有间距为3 . 5nm的失配位错阵列,界面处的高密度位错可体现出类似深能级施主的特性,尤其在低温下对载流子散射更加显著。 |
