English translation for "异质外延"
|
- hetero epitaxy
heteroepitaxy
Related Translations:
外延: denotation; epitaxy; [逻辑学] extension: ""plant"" 是一个外延较大的词。""plant"" is a word with wide extension 外延辛烷值: extrapolated octane number 外延集成电路: epitaxial integrated circuit 外延数据库: extensional data baseextensional database 外延性公理: axiom of extensionality
- Example Sentences:
| 1. | The effect of lattice mismatch on the nucleation process of heteroepitaxial growth of ultrathin film
晶格失配对异质外延超薄膜生长中成核特性的影响 | | 2. | So it is an maximum challenge and difficulty to product heteroepitaxial big size high - orientation and single crystal diamond films and big area transparent diamond films in nodiamond substrate ' s surface for present diamond films " r & d
因此，目前金刚石薄膜研究面临的最大挑战和难点就是在非金刚石衬底表面异质外延生长大尺寸高取向和单晶金刚石膜以及制备大面积透明金刚石膜。 | | 3. | In this thesis , the cvd technique and “ two - step growth process ” were used to deposit the 3c - sic films , that was to carbonize si substrate in carbide gas atmosphere first in order to form a buffer layer , then deposited the 3c - sic films on this buffer layer
本论文采用cvd方法,并结合“两步生长工艺”进行3c - sic的异质外延生长。即:首先将si基片碳化,形成一个碳化缓冲层,然后再在此缓冲层上异质外延生长3c - sic薄膜。 | | 4. | In this paper , the growth technology is presented for epitaxial silicon carbide films on sapphire with a buffer layer by atmospheric - pressure chemical vapor deposition ( apcvd ) process . the effect of temperature and precursors flow rates on the growth of silicon carbide films by chemical vapor deposition is analyzed . the structural properties of the films grown on sapphire compound substrate are studied by x - ray diffraction ( xrd ) , x - ray photospectroscopy ( xps ) and photoluminescence spectroscopy
本论文提出了在蓝宝石上引入一层缓冲层材料形成复合衬底，采用常压化学气相淀积( apcvd )方法在其上异质外延生长sic薄膜的技术，分析了cvd法生长sic的物理化学过程，通过实验提出sic薄膜生长的工艺条件，并通过x射线衍射( xrd ) 、 x射线光电子能谱( xps ) 、光致发光谱( pl谱)和扫描电镜( sem )对外延薄膜的结构性质进行分析。 | | 5. | The theoretical calculation and explanation of strain behavior during heteroepitaxy of oxides thin films : when the lattice mismatch is relative small ( for example , batio _ 3 / srtio _ 3 with a lattice mismatch of 2 . 18 % ) , the growth mode of thin films is layer - by - layer , and the critical thickness and strain relaxation can be calculated or estimated by matthews - blakeslee expressions ; when the lattice mismatch is large ( for example mgo / srtio _ 3 with lattice mismatch of 8 % ) , the strain relaxation process can be explained by theory of coherent strained islands
氧化物薄膜异质外延应变行为的理论预测和解释。对于晶格失配较小的外延体系(如batio3 / srtio _ 3 2 . 18 % ) ,薄膜以层状方式进行生长,临界厚度和应变释放过程可以用经典的matthews - blakeslee公式进行预测;对于晶格失配较大的体系(如mgo / srtio _ 3 8 % ) ,薄膜以岛状方式进行生长,应变释放过程可以由弹性应变岛的理论体系进行解释。 | | 6. | Sige - on - insulator ( sigeoi ) , which appears very recently , integrates both the advantages of soi and that of sige and thus attracts much attention for the potential applications in low voltage , low power consumption , high dense integrated circuits and optoelectronics , system on chip etc . but people are in the very beginning of the sige - oi material fabrication research . this work focuses on these three facets : 1 . sige film preparation ; 2
本论文结合以上背景，主要进行了以下几个方面的研究：一、硅基上sige材料的异质外延生长技术，以及sige薄膜的表征；二、 sige - oi的simox制备工艺研究；三、 sige - oi材料的smart - cut制备工艺研究，以及sige / si异质结结构中注入h离子的物理效应。 | | 7. | The heteroepitaxial growth of 3c - sic on si substrate not only unfurls the maturity of si process , but also incarnates the excellence of 3c - sic , so that it become for long researchful direction . due to the large lattice parameter mismatch ( ~ 20 % ) and the large thermal expansion coefficient mismatch ( ~ 8 % ) , however , the 3c - sic / si study is very difficult
然而,由于3c - sic与si之间存在较大的晶格失配度(约20 % )和热膨胀系数差异(约8 % ) ,因此, 3c - sic / si异质外延薄膜的制备非常困难,仍存在许多技术问题需要克服。 | | 8. | Molecular beam epitaxy ( mbe ) has been used to grow insb heteroepilayer on gaas ( 001 ) substrate with optimized low temperature buffer layer . the surface morphology and crystal quality of insb epilayers have been investigated by means of atomic force microscope ( afm ) , scanning electron microscopy ( sem ) and double crystals x - ray diffraction ( dcxrd )
本文采用分子束外延( mbe )方法在gaas ( 001 )衬底上优化低温缓冲层生长条件制备了异质外延insb薄膜,采用原子力显微镜( afm ) 、扫描电镜( sem )与x射线双晶衍射( dcxrd )等方法研究了insb / gaas薄膜的表面形貌与结晶质量。 | | 9. | Based on laser molecular beam epitaxy , the strain behavior and the corresponding control technology in oxides heteroepitaxial system , especially in ferroelectric thin films with perovskite structure , was systematically studied by using in situ reflected - high - energy - electron - diffraction ( rheed ) . some original and meaningful results were obtained . following aspects were included in this dissertation : the structure of thin films is analyzed by rheed
本论文基于激光分子束外延的基本原理,以高能电子反射为主要监测工具,对氧化物薄膜特别是铁电氧化物薄膜异质外延过程中应变行为及其控制方法进行了系统的研究,并取得了一系列有意义的结果,主要包括以下内容:利用反射高能电子衍射( rheed )的信息对薄膜结构进行分析。 |
- Similar Words：
- "异质同形；同态" English translation, "异质同形的" English translation, "异质同形体" English translation, "异质同形物" English translation, "异质同形现象" English translation, "异质外延的" English translation, "异质外延淀积" English translation, "异质外延二极管" English translation, "异质外延光波导" English translation, "异质外延膜" English translation
|
|
|
