异质外延 meaning in English
hetero epitaxy
heteroepitaxy
Examples
- The effect of lattice mismatch on the nucleation process of heteroepitaxial growth of ultrathin film
晶格失配对异质外延超薄膜生长中成核特性的影响 - So it is an maximum challenge and difficulty to product heteroepitaxial big size high - orientation and single crystal diamond films and big area transparent diamond films in nodiamond substrate ' s surface for present diamond films " r & d
因此，目前金刚石薄膜研究面临的最大挑战和难点就是在非金刚石衬底表面异质外延生长大尺寸高取向和单晶金刚石膜以及制备大面积透明金刚石膜。 - In this thesis , the cvd technique and “ two - step growth process ” were used to deposit the 3c - sic films , that was to carbonize si substrate in carbide gas atmosphere first in order to form a buffer layer , then deposited the 3c - sic films on this buffer layer
本论文采用cvd方法,并结合“两步生长工艺”进行3c - sic的异质外延生长。即:首先将si基片碳化,形成一个碳化缓冲层,然后再在此缓冲层上异质外延生长3c - sic薄膜。 - In this paper , the growth technology is presented for epitaxial silicon carbide films on sapphire with a buffer layer by atmospheric - pressure chemical vapor deposition ( apcvd ) process . the effect of temperature and precursors flow rates on the growth of silicon carbide films by chemical vapor deposition is analyzed . the structural properties of the films grown on sapphire compound substrate are studied by x - ray diffraction ( xrd ) , x - ray photospectroscopy ( xps ) and photoluminescence spectroscopy
本论文提出了在蓝宝石上引入一层缓冲层材料形成复合衬底，采用常压化学气相淀积( apcvd )方法在其上异质外延生长sic薄膜的技术，分析了cvd法生长sic的物理化学过程，通过实验提出sic薄膜生长的工艺条件，并通过x射线衍射( xrd ) 、 x射线光电子能谱( xps ) 、光致发光谱( pl谱)和扫描电镜( sem )对外延薄膜的结构性质进行分析。 - The theoretical calculation and explanation of strain behavior during heteroepitaxy of oxides thin films : when the lattice mismatch is relative small ( for example , batio _ 3 / srtio _ 3 with a lattice mismatch of 2 . 18 % ) , the growth mode of thin films is layer - by - layer , and the critical thickness and strain relaxation can be calculated or estimated by matthews - blakeslee expressions ; when the lattice mismatch is large ( for example mgo / srtio _ 3 with lattice mismatch of 8 % ) , the strain relaxation process can be explained by theory of coherent strained islands
氧化物薄膜异质外延应变行为的理论预测和解释。对于晶格失配较小的外延体系(如batio3 / srtio _ 3 2 . 18 % ) ,薄膜以层状方式进行生长,临界厚度和应变释放过程可以用经典的matthews - blakeslee公式进行预测;对于晶格失配较大的体系(如mgo / srtio _ 3 8 % ) ,薄膜以岛状方式进行生长,应变释放过程可以由弹性应变岛的理论体系进行解释。