荧光带 meaning in English
fluorescence band
fluorescent strip
Examples
- In order to clarify the origin of pl and enhance the luminescence efficiency of materials , the study of the relationship between preparation process and pl properties is very important
对制备方法及其工艺参数对薄膜荧光特性影响的研究，不仅可以进一步澄清各荧光带的起因，而且也是提高材料发光性能的重要途径。 - Besides two pl bands located at 250 - 400nm and 650 - 700nm , two groups of distinguishable pl peaks were observed for the first time in the a - sioxny thin films , which centered at about 370nm and 730nm , respectively
在a - sioxny薄膜中，观察到了250 - 400nm和650 - 700nm两个荧光带，并首次发现中心位于370nm和730nm的两组分立荧光峰。 - If an immunofluorescence stain with antibody to complement or immunoglobulin is performed , then one can see the brightly fluorescing band along the dermal epidermal junction that indicates immune complex deposits are present
如果针对补体的抗体或免疫球蛋白进行免疫荧光染色,我们就能在表皮与真皮的交界处看到一条明亮荧光带，表明有免疫复合物的存在 - The intensity of distinguishable pl peaks increased with the increasing n content in the films , and the central positions of the above two pl bands were influenced by both the content of o and n . it is suggested that these pl were originated from luminescence centers related to si - o and 0 - si - n defects
分立峰强度随薄膜中的氮含量增加而升高，荧光带中心位置受到氧、氮含量的影响，分析表明其荧光起源于si - o和n - si - o等复合缺陷组态能级间的辐射跃迁。 - Intense pl band at 300 - 570nm , whose central position was found red - shifted with the increase of o content , was observed in the a - sihxoy thin films fabricated by pecvd . thin films with strong blue pl peaks were prepared by plasma oxidation , and the result directly proved that the blue pl peaks were originated from si - o defect levels
通过pecvd法与放电等离子体氧化技术结合获得了主峰位于蓝光波段的荧光带，而且具有分立峰结构，其结果直接证明了蓝光发射与缺陷能级有关，起源于si - o结合特定组态而形成的发光中心。