| 1. | Components of gate terminal for power semiconductor devices
电力半导体器件用门极组合件 |
| 2. | Integrated gate - commutated thyristor - igct
集成门极换流晶闸管 |
| 3. | Igct integrated gate commutated thyristor
集成门极换向晶闸管 |
| 4. | Optimization design and simulation analysis on high power gto driver circuit
门极驱动电路的优化设计与仿真分析 |
| 5. | Optimal design of transparency of anode emitter in gate commutate thyristor
门极换向晶闸管阳极透过率的优化设计 |
| 6. | Once the device begins to conduct , it is latched on and the gate current can be removed
一旦器件（晶闸管）导通，门极电流即可去掉。 |
| 7. | The thyristor cannot be turned off by the gate , and the thyristor conducts as a diode
此时晶闸管就象二极管一样导通，不能通过门极关断。 |
| 8. | Yet i tell you that not even solomon in all his splendor was dressed like one of these
然而我告诉你们，就是所罗门极荣华的时候，他所穿戴的，还不如这花一朵呢。 |
| 9. | 29 and yet i say unto you , that even solomon in all his glory was not arrayed like one of these
然而我告诉你们、就是所罗门极荣华的时候、他所穿戴的、还不如这花一朵呢。 |
| 10. | This allows the gate to regain control in order to turn the device on at some controllable time after it has again entered the forward blocking state
这样，当晶闸管重新处于正向阻断状态（器件处于可控时间） ，使得门极变得可控。 |
