| 1. | High order electromagnetic field of current carrying conductor at rest
静止载流导体的高阶电磁场 |
| 2. | Current - carrying conductor
载流导体 |
| 3. | Numerical calculation and computer simulation of magnetic field of long straight conductor with ellipse cross - section
椭圆截面长直载流导体磁场的数值计算和计算机模拟 |
| 4. | We also investigate the relationships between the magnetic force exerting on the guided atoms and the parameters of the vccc
其次，分析了被导引原子在磁场中的受力与v -型载流导体不同参数之间的关系。 |
| 5. | We propose two novel schemes to guide cold neutral atoms by using a static magnetic field from a v - and u - shaped current - carrying conductors ( vccc and uccc )
本文提出了采用v -型载流导体和u -型载流导体实现中性原子磁导引的新方案。 |
| 6. | Moreover , we propose some atom - optical elements based on the vccc , such as atomic funnel , atomic beam splitter and atomic interferometer . in the scheme of the uccc
最后，利用v -型载流导体构建了多种原子光学器件，例如原子漏斗，原子分束器和原子干涉仪等。 |
| 7. | We calculate the relationships between the distribution of the magnetic field and the parameters of the uccc . we find that the uccc can be used to realize both single - and double - channel magnetic guiding of cold atoms
通过对横向磁场的计算和分析，发现u -型载流导体方案既可以实现单通道原子磁导引，也可以实现双通道原子磁导引。 |
| 8. | In the case of single - channel magnetic guiding , we calculate the relationship between the guiding efficiency and electric current or the transverse temperature of atomic beam . we also propose several atom - optical elements base on the uccc
本文也计算了单通道磁导引情况下，原子导引效率和电流、原子束横向温度之间的关系，并采用u -型载流导体构建了多种原子光学器件。 |
| 9. | In the scheme of the vccc , we calculate the relationships between the distributions of the magnetic field along z - axis or x - direction and various parameters of the vccc , and obtain several fitting equations that can be used to describe the relationships mentioned above
在v -型载流导体方案中，首先计算了磁场在导引中心处沿z轴方向和x方向上的分布，分析了磁场空间分布与载流导体参数之间的关系，给出了几个拟合公式。 |
| 10. | This paper makes a further analysis of the traditional opinion about ampere force that is the macroscopic showing of lorentz force , and it demonstrates that microscopic nature of ampere force is composition of electric field forces applied by hall electric field which is caused by lorentz forces for the positive ions at the crystal lattice of the conductor in magnetic field
摘要对安培力是洛伦兹力的宏观表现的传统说法进行了深入剖析，指明了安培力微观本质是由于洛伦兹力而引起的霍尔电场对磁场中载流导体的晶格正离子施加的电场力的合力。 |
