Chinese translation for "空穴迁移率"

hole mobility

Related Translations:

空穴:  [电子学] hole; electron hole; cavity; positive hole

过剩空穴:  excess hole

空穴系数:  void coefficientvoids ratio

空穴能:  cavity energy

火焰空穴:  trough of flame

空穴振荡:  cavity oscillations

电子空穴:  electron holesvacant electron site

空穴现象:  cavitation

空穴传导:  hole conduction

空穴射流:  cavitation jet

Example Sentences:

	1.	In strained - si pmosfet with si0 . 76ge0 . 24 substrate , the mobility enhancement factor is 1 . 25 . however , as the ge content in sige substrate surpasses 40 % , the mobility enhancement in strained si pmosfet becomes saturated 对于衬底中ge含量为24 %的应变硅pmosfet ,空穴迁移率是相同尺寸硅pmosfet的1 . 25倍,当ge含量超过40 %时,空穴迁移率达到饱和。
	2.	From which we can draw a conclusion that the hole mobility can experience a 15 % improvement in the strained sige layer while the electron mobility can experience a 48 . 5 % improvement in the strained si layer 通过比较实验我们可以获知,应变si材料中的电子迁移率相比于体si材料最大可有48 . 5 %的提高，而应变sige材料中的空穴迁移率相比于体si材料可有近15 %的提高。
	3.	For strained si pmosfets , the hole mobility is not only determined by the tensity of strain , but also related to the strain types , which are uniaxial compressive strain and biaxial tensile strain . when electric field is high enough , the hole mobility will be deteriorated in pmosfets under biaxial tensile strain , however , in the case of uniaxial compressive strain , the deterioration will never occur 经模型分析发现,应变硅pmosfet空穴迁移率与应力作用方式有如下关系:当横向电场较高( > 5 105v / cm )时,双轴张应力作用下的应变硅pmosfet的空穴迁移率将发生退化,而单轴压应力器件则不会受到影响。

Similar Words：

"空穴能" Chinese translation, "空穴漂移" Chinese translation, "空穴漂移电流" Chinese translation, "空穴漂移率" Chinese translation, "空穴迁移" Chinese translation, "空穴迁移率晶体管" Chinese translation, "空穴区" Chinese translation, "空穴燃烧效应" Chinese translation, "空穴色谱" Chinese translation, "空穴色谱法" Chinese translation