Chinese translation for "空位缺陷"

vacancy defect

Related Translations:

空位:  1.(空着的位子) a vacant or unoccupied seat; void; vacancy 短语和例子他的去世留下了这个空位。 his death has left the void. 这有一个空位。here is an unoccupied seat.2.[固体物理] [物理学] [半] vacancy; bit bare; dummy bit; spare

负离子空位:  negative-ion vacancy

空位沉淀:  vacancy precipitation

结构空位:  structural vacancy

剥蚀空位:  degradation vacuity

空位聚集:  condensation of vacanciesvacancy condensation

空位期间:  interregnum

表面空位:  surface vacancy

空位簇:  vacancy cluster

空位机理:  vacancy mechanismvacant site mechanism

Example Sentences:

	1.	It is found that the pl spectra of al - si - sio2 films are composed of 3 bands located at about 370nm , 410nm , and 510nm , respectively . the peak position changes little with the different amount of al , while the intensity of the pl peak changes Ple结果表明， 37onm和410nm的pl ，峰与样品中的氧空位缺陷有关，而510nm的pl峰则是由于铝的掺入改变了样品中的缺陷状态所致，是al 、 si 、 o共同而复杂的作用结果。
	2.	The experiments show an room temperature in the course of reactive sputtering conduces to restraining the surface reaction between hf02 and si layer ; 2 . we studied different surface progress . comparable with conventional method , the surface with nh4f cleaning step have superior thermal stability with hfo2 , nh4f cleaning step is introduced can reduces leakage current and eot ; 3 栅泄漏电流的减小可归于氧空位缺陷的减小，即高的溅射氧气氛和氧气氛退火有助于减小hfo _ 2栅介质中的氧空位缺陷； 4 )研究了反应溅射制备的hfo _ 2栅介质漏电流机制及其silc效应。
	3.	The as - grown crystals were characterization by cutting and directional , x - ray diffraction , high resolution ohmmeter , ir transmission spectroscopy , visible light absorption spectroscopy , scan electronic microscopy ( sem ) and positron annihilate time technique ( pat ) . the ir transmittance of czt single crystals grown with cd - riched is about 53 % , while 23 % with no cd riched 采用解理实验、 x射线衍射、电学性能测试、红外透过谱测试、可见光吸收谱测试、 sem蚀坑分析、探测器的试制等分析测试方法，并首次采用正电子湮没寿命谱分析方法来研究czt单晶体的空位缺陷，综合表征了所生长的晶体的质量和性能。
	4.	After annealing at 600 , because of formation of multi - vacancy - type defects that have long positron lifetime , positron annihilation average lifetime increased . when the average positron lifetime increased to maximum value ( 360ps ) , the interstitial oxygen concentration decreased to minimum value ( 4 1017atoms / cm3 ) . this result suggested that oxygen was involved in the formation of multi - vacancy - type defects 正电子湮没技术测试证明，快中子辐照直拉硅中在大约600退火时产生的多空位缺陷具有较长正电子寿命，可以使正电子平均寿命增加，当样品的正电子平均寿命达到最大时( 360ps ) ，其间隙氧含量降到一个极小值( 4 10 ~ ( 17 ) atoms / cm ~ 3 ) ，这说明氧参与了这些缺陷的形成。

Similar Words：

"空位偶" Chinese translation, "空位盘" Chinese translation, "空位期" Chinese translation, "空位期间" Chinese translation, "空位迁移率" Chinese translation, "空位蠕变" Chinese translation, "空位时期" Chinese translation, "空位式位错割阶" Chinese translation, "空位述谓结构" Chinese translation, "空位数字" Chinese translation