Chinese translation for "离子源的"

ionogenic

Example Sentences:

	1.	Characteristics of rf ion source electromagnetic field 型放电离子源的场特性
	2.	Construction of electrostatic accelerator rf ion source 用于静电加速器的高频离子源的设计和调试
	3.	The theory of ion etching and the parameter of ion source designing are discussed in detail 并且详细介绍了离子刻蚀和离子源的原理。
	4.	We suggest that optimization of the tip geometry considerably improve the performance of the liquid metal ion source 从而为液态金属离子源的设计提供了一个有效的辅助工具。
	5.	Various factors , including the apex geometry of the emitter tip , the protrusion length , and the simulated charge distribution , were considered 因而对其发射系统进行仿真分析，可以很好地指导液态金属离子源的设计制造。
	6.	Electric field of the emission system of a liquid metal ion source was simulated , based on the conventional dynamic protrusion model and the widely used charge simulation method 摘要发射系统是液态金属离子源的关键部件之一，它的性能的优劣直接影响到整个离子源的工作稳定性和可靠性。
	7.	( 4 ) chapter vi . the theory of ion curren extraction of rf ion source is investigated , the reason of emission surface formation and its effect on ion curren extraction are reasearched emphatically ( 4 )对高频离子源的束流引出原理作了理论推导和分析，着重研究了发射面的形成及其对引出束流特性的影响。
	8.	The conclusion that ez is more important during the breakdown of rf ion source is made out by comparing ez and e 6 before breakdown , and then , the breakdown criterion of rf ion source is deduced , and the relation between breakdown voltage and pressure is analyzed too 通过比较击穿前高频电场的轴向和幅向分量，得出了轴向电场在高频离子源击穿中起主要作用的结论，并进而推导出了高频离子源的击穿判据，得出了气体击穿时离子源击穿电压和放电管内气压的关系。
	9.	In this thesis , we research the characters on the ion beam sputtering system , and prepare tiny films and cnx / tiny multilayers by ion beam sputtering . the best parameters of preparing cnx films are explored . we use the tiny films as template to promote the growth of cnx films 本文对离子源的溅射特性进行了研究，采用离子束溅射法制备了tin _ y单层薄膜和cn _ x tin _ y多层薄膜，探索该法制备cn _ x薄膜的最佳工艺参数，并利用tin _ y薄膜为衬底以促进cn _ x薄膜的生长。
	10.	The theory of ion - beam etching and ion sources are reviewed . the classification of ion - beam etching are introduced . according to the mechanism that ion sputtering leads to faceting , trenching , reflection and redeposition , some relative solutions are put forward 综合叙述了离子束刻蚀技术和离子源的工作原理,简单介绍了离子束刻蚀的分类,阐述了离子束刻蚀的物理溅射效应导致的刻面,开槽,再沉积等现象的产生机理及解决办法,分析了kaufman离子源进行ribe的可行性及出现的问题。

Similar Words：

"离子预热阴极" Chinese translation, "离子原子互换" Chinese translation, "离子源" Chinese translation, "离子源参数" Chinese translation, "离子源磁铁" Chinese translation, "离子源的均匀度" Chinese translation, "离子源和电子束源物理" Chinese translation, "离子源试验站" Chinese translation, "离子源头" Chinese translation, "离子源狭缝" Chinese translation