| 1. | There exists certain photonic band gap in this structure
在一定频率还存在禁带。 |
| 2. | Zinc oxide is a material widely used in many areas
氧化锌是一种多用途的宽禁带半导体材料。 |
| 3. | Negative group velocity in the band gap range
禁带区域内负的群速度 |
| 4. | Zno is a direct wide band - gap ii - vi semiconductor material
氧化锌是一种-族宽禁带氧化物半导体材料。 |
| 5. | A pmc structure with a complete photonic bandgap has been designed
设计出了具有完全光子禁带的pmc结构。 |
| 6. | Effect of structure and defect on photonic band gap of 2d photonic crystal
二维光子晶体结构和缺陷对光子禁带的影响 |
| 7. | Wide bandgap semiconductor
宽禁带半导体 |
| 8. | Wide bandgap emitter
宽禁带发射极 |
| 9. | The band gap calculation of wide - gap ternary compound nitride semiconductors in group
族宽禁带含氮三元混晶半导体禁带宽度的计算 |
| 10. | Structure of basic period of one - dimensional photonic crystal and the characters of forbidden bands
一维光子晶体的基本周期结构及其禁带特征 |
