| 1. | Boat - grown gallium arsenide single crystals and as - cut slices
水平法砷化镓单晶及切割片 |
| 2. | Gallium arsenide single crystal - determination of dislocation density
砷化镓单晶位错密度的测量方法 |
| 3. | Liquid encapaulated czochralski - grouwn gallium arsenide single crystals and as - cut slices
液封直拉法砷化镓单晶及切割片 |
| 4. | Test method for microzone homogeneity of semi - insulating monocrystal gallium arsenide
半绝缘砷化镓单晶微区均匀性测试方法 |
| 5. | Quantitative determination of ab microscopic defect density in gallium arsenide single crystal
砷化镓单晶ab微缺险密度定量检验方法 |
| 6. | Test method for carbon concentration of semi - insulating monocrystal gallium arsenide by measurement infrared absorption method
半绝缘砷化镓单晶中碳浓度的红外吸收测试方法 |
| 7. | Test method for deep level el2 concentration of undoped semi - insulating monocrystal gallium arsenide by measurement infrared absorption method
非掺杂半绝缘砷化镓单晶深能级el2浓度红外吸收测试方法 |
| 8. | Liquid encapsulated czochralski ( lec ) si - gaas is widely used in the microwave device and the substrates of high speed digital optic - electronic integrated circuits , and it has become one of major materials in information industry
液封直拉法生产的半绝缘砷化镓单晶( lecsi - gaas )被广泛用于微波器件和高频集成电路的衬底材料，成为当代信息产业的重要材料之一。 |
