Chinese translation for "电子气"

electron fluid
electron gas

Example Sentences:

	1.	Progress in two - dimensional electron gas in group - - nitride heterostructures 族氮化物异质结构二维电子气研究进展
	2.	Influence of al composition on transport properties of two - dimensional electron gas in alx ga1 - x n gan heterostructures 异质结构中二维电子气输运性质的影响
	3.	Influence of polarizations and doping in algan barrier on the two - dimensional electron - gas in algan gan heterostruture 异质结构中极化与势垒层掺杂对二维电子气的影响
	4.	In this dissertation , we study the quantized conductance phenomena on the experimental side and obtain the physical parameters of the 2deg in our samples 在这论文中，我们在实验方面研究了电导量子化的现象，并且得到我们样品之二维电子气的基本特性。
	5.	Recently , the interaction between saw and the 2deg in the gaas / alxga1 - xas heterojunction has attracted more and more scientists " attentions 近年来,表面声波( saw )通过压电效应与gaas / alxga1 - xas异质结中二维电子气( 2deg )的相互作用受到越来越多的关注。
	6.	Under high drain voltage condition , the results proved that channel electrons are easily ejected into gan buffer layer and be trapped to induce current collapse 在大漏极电压条件下,沟道电子易于注入到gan缓冲层中,并被缓冲层中的陷阱所俘获,耗尽二维电子气,从而导致电流崩塌效应。
	7.	Based on gan hemt device physics and experiment results , we found electron mobility is depend on sheet density of 2deg and proposed a new gan hemt current collapse physical model 基于ganhemt器件物理和实验分析测试结果,发现电子迁移率与二维电子气浓度有关,并提出了一种gan电流崩塌效应的新物理模型。
	8.	This model described relationship of current collapse and traps in buffer layer , and the normalized product of electron mobility and 2deg density with and without current collapses was 0 . 95 vgs 该模型描述了电流崩塌效应与缓冲层中陷阱的相互关系,并获得了电流崩塌前后迁移率与二维电子气浓度乘积的归一化值0 . 95 vgs 。
	9.	By the use of iteration method to solve schrodinger - poisson equations when algan barrier layer doped about 1 1018cm - 3 , the max sheet density of 2deg is 1 1012cm - 2 and the thickness of 2deg is increasing from 15nm to 40nm with barrier ’ s thickness increasing 采用迭代法求解schrodinger - poisson方程,当algan势垒层掺杂浓度为1 1018cm - 3时,二维电子气浓度最高可达1 1012cm - 2 ,并且二维电子气薄层厚度随着势垒层厚度的增加从15nm增加到40nm 。
	10.	However , in our nation , the research on gan - based microelectronic devices is in the early stage , and a great deal of vestigation is still needed to perform on separative processes of gan devices . due to the lack of algan / gan heterojunction materials in the country , a few researches on algan / gan were made , and the investigation on schottky rectifiers is much less 在国内， gan基微电子器件的研究刚开始起步，制备gan分立器件的工艺尚处于探索研究阶段，特别是受algan gan二维电子气材料来源的限制，国内algan gan基的场效应晶体管的研究开展得较少，关于肖特基整流二极管的研究更少。

Similar Words：

"电子器件及灯泡用钨铼合金丝" Chinese translation, "电子器件用铜焊填充金属" Chinese translation, "电子器件组件" Chinese translation, "电子器具" Chinese translation, "电子器械厂" Chinese translation, "电子气泵" Chinese translation, "电子气笛" Chinese translation, "电子气动" Chinese translation, "电子气动的" Chinese translation, "电子气候控制" Chinese translation