Chinese translation for "源气体"

source gases
sourcegases

Example Sentences:

	1.	In the experiments , we also found the - sources flow rate , temperate of the substrates , annealing time and annealing temperature have an important infuence to epitaxial quality of the films 在实验过程中，我们也发现-族源气体的流量比、衬底温度、退火时间和退火温度对外延晶体的生长质量也有重要的影响。
	2.	By film thickness measured , fourier transformed infrared spectrometer ( ftir ) analysis , x - ray photoelectron spectroscopy ( xps ) analysis and relative irradiance measurement , the effect of microwave input powers on deposition rates , f / c ratios , bonding configurations of ct - c : f films and the radicals in plasma originating from source gases dissociation is analyzed 由于微波功率的改变会导致等离子体中电子温度和等离子体密度发生变化，从而造成不同的源气体分解过程，结果微波功率的升高导致了薄膜沉积速率的提高、 f / c比的降低，同时也导致薄膜中cf和cf _ 3基团密度的降低，而保持cf _ 2基团密度接近常数。
	3.	The first liquid oxygen and liquid nitrogen equipments of xichang and jiuquan satellite lauching base run normally until now , which has made important contribution for our coutry ' s aviation and spaceligh enterprise , thus attained national defense sicience and industry committ ' s appreciation 提供大连日酸气体公司的氮液化设备，开创了日酸公司首用国产成套设备的先河；哈尔滨黎明气体公司和成都侨源气体公司则是我公司大型液氧液氮设备的重点用户，由于过硬的技术和稳定的质量，短短二、三年时间内，这些用户相继增购了多套同类产品。
	4.	The quality of buffer layer and thin films was analyzed by afm , xrd , rheed and xps respectively . the effect of the experimental parameters such as carbonization time , working pressure , c source gas flow rate , carbonization temperature , different carbonization gas and substrate on the carbonization process was studied firstly . it was observed that the size of particles was increased with the increase of carbonization time and the rms was opposite , but the trend was reduced while the carbonization time was long enough ; the size of particles was increased with the increase of working pressure too , and choosing a proper working pressure could get a smooth surface ; the size of particles was unobviously changed while the gas flow rate was low , but it was notability increased with the increase of gas flow rate while the gas flow rate was high enough , and a smooth surface could be also obtained by choosing a proper gas flow rate ; with the increase of carbonization temperature , the size of particles was increased , the rms is decreased and a good single - crystalline carbonization layer could be obtained , but a rough surface was formed at a excessive high temperature ; the rms of 对于碳化工艺,侧重研究了碳化时间、反应室气压、 c源气体的流量、碳化温度以及不同种类的c源气体、基片取向等因素对碳化层质量的影响,研究结果表明:随着碳化时间的增长,碳化层的晶粒尺寸随之变大,表面粗糙度随之降低,但当碳化到一定时间之后,碳化反应减缓,碳化层的晶粒尺寸以及表面粗糙度的变化幅度变小;碳化层的晶粒尺寸随反应室气压的升高而变大,适中的反应室气压可得到表面比较平整的碳化层;在c源气体的流量相对较小时,碳化层的晶粒尺寸随气体流量的变化不明显,但当气体流量增大到一定程度时,碳化层的晶粒尺寸随气体流量的增大而明显变大,同时,适中的气体流量得到的碳化层表面粗糙度较低;碳化温度较低时,碳化层的晶粒取向不明显,随着碳化温度的升高,碳化层的晶粒尺寸明显变大,且有微弱的单晶取向出现,但取向较差,同时,适中的碳化温度可得到表面平整的碳化层;相比于c _ 2h _ 2 ,以ch _ 4作为c源气体时得到的碳化层表面平整得多;比起si ( 100 ) ,选用si ( 111 )作为基片生长的碳化层的晶粒取向一致性明显更好。
	5.	The main simulation results were as follow : the average energy of electron decreases with the increasing pressure ; it decreases with the increasing methane concentration in the filling gas in the lower pressure range and increases in the higher pressure range ; the number density of fragment h and ch3 does not always increases with the gas pressure , but reaches an individual maximum ; energy carried by neutral dissociative fragment ch3 decreases with increasing gas pressure and ch4 concentration 主要结果如下：平均电子能量随着反应室内气压的增加呈下降趋势；在较低气压范围内平均电子能量随着反应源气体中甲烷浓度的增加而减少；在较高气压范围内平均电子能量则随着甲烷浓度的增加而增加；随着气压的增加碎片h和ch _ 3的数目并不是一直增加的，而是在不同的特定气压下出现各自的最值；碎片携带的能量基本随甲烷浓度和气压的增加而减小。
	6.	In this paper , the gas phase dissociation process during the diamond film growth from electron - assisted chemical vapor deposition ( eacvd ) by considering ch4 / h2 mixture gas as source gas had been studied by using monte - carlo computer simulation method . the eacvd gas phase dynamics model was built firstly and the low temperature deposition process was also discussed 本工作采用蒙特卡罗( monte - carlo )计算机模拟的方法，对以ch _ 4 h _ 2为源气体的电子助进化学气相沉积( eacvd )金刚石薄膜中的气相分解过程进行了研究，初步建立了eacvd气相动力学模型，并讨论了eacvd中的低温沉积过程。
	7.	In this thesis , we have mainly studied the characteristics of chf3 , c6h6 and cf4 electron cyclotron resonance ( ecr ) plasma using langmuir probe and optical emission spectroscopy ( oes ) . the relative concentration of different radicals in chf3 plasma and the effect of chf3 / c6h6 ratio on bond configuration of a - c : f films were discussed . it was showed that h , f , c2 were the main radicals among radicals of h , f , c2 , ch and f2 in chf3 ecr plasma 重点研究了chf _ 3 、 cf _ 4和chf _ 3 c _ 6h _ 6放电等离子体中基团的分布；分析了不同基团的相对密度随宏观放电条件(微波输入功率、放电气压、源气体流量比)的变化规律；探讨了等离子体中各种基团的生成途径；在不同源气体流量比的条件下沉积了a - c ： f薄膜并通过傅立叶变化红外吸收光谱( ftir )的测量得到了薄膜中键结构的信息；分析了a - c ： f薄膜的沉积速率及其键结构与等离子体空间基团分布状态之间的关联。

Similar Words：

"源平讨魔传" Chinese translation, "源平之战" Chinese translation, "源七" Chinese translation, "源七郎" Chinese translation, "源器官" Chinese translation, "源乾曜" Chinese translation, "源强" Chinese translation, "源强度" Chinese translation, "源强度测定" Chinese translation, "源强度归一化" Chinese translation