| 1. | Long throw sputtering method
长抛溅射法 |
| 2. | Target material was hexagonal boron nitride ( hbn ) and working gas was pure argon
用射频溅射法在si衬底上制备立方氮化硼，靶材为hbn ， 。工作气体为氩气。 |
| 3. | Ultrathin aluminum films were prepared by dc reactive magnetron sputtering . the target was made by 99 . 999 % pure aluminum
采用直流磁控溅射法溅射纯度为99 . 999 %的铝靶制备了超薄铝膜。 |
| 4. | In the first part of the thesis tin film in different n2 partial pressure prepared by reactive magnetron sputtering is studied
本文首先研究了磁控溅射法在不同氮气分压下所制备的tin薄膜。 |
| 5. | The designed films of sio2 and sio2 / si are prepared on sample and hemisphere dome of sapphire by radio frequency magnetron reactive sputtering method
利用射频磁控反应溅射法，在蓝宝石试片和半球形头罩上制备出所设计的sio _ 2和sio _ 2 si增透膜系。 |
| 6. | The purity of film deposited by rf magnetron sputtering is very high , and the reason that impurities exist in the film deposited by dc magnetron sputtering is analyzed
射频磁控溅射法可获得高纯的cu ag膜，分析了直流磁控溅射法制备的cu ag薄膜中存在杂质的原因。 |
| 7. | Inlaid target sputtering to remove oxide scale on surface of al mmcs at first , then another copper target sputtering , copper film was deposited on the inlaid target
研究了磁控溅射法在待连接表面沉积中间层的工艺参数以及不同的中间层制备方法对tlp连接接头组织和性能的影响。 |
| 8. | To meet the demands of transparent electrodes of oled devices , ito films were deposited at low substrate temperature , and their performances were discussed in this paper
首先,依据氢气的还原作用在溅射气氛中引入水蒸气,采用直流磁控溅射法在衬底温度低于200的条件下制备ito膜。 |
| 9. | Sic film was coated on the surface of 316l stainless steel by substrate bias - assisted radio frequency ( rf ) sputtering as tritium permeation barrier ( tpb ) of first wall and blanket in fusion reactor
采用分步偏压辅助射频( rf )溅射法在316l不锈钢表面制备了sic薄膜。扫描电镜( sem )观察表明膜致密、均匀、与基体结合牢固。 |
| 10. | And so on , the method of cvd and pvd were also discussed . through the theoretical calculation and experimental results , the distance between the diaphragm and the base plate was optimize , which will touch in case of over loading
另外也对化学气相沉积法( cvd法)和物理气相沉积法( pvd法) (包括其中的溅射法)进行了探讨。 |
