Development of diffusion barrier for cu interconnection in ulsi 互连扩散阻挡层的研究进展
2.
A novel barrier ( sion ) prepared by implanting nitrogen into silicon dioxide and the novel two - layer barrier ( ta and sion ) prove to be very effective on avoiding copper diffusion from the xps and aes results 通过xps和aes分析新型的扩散阻挡层sion及ta和sion双层结构的扩散阻挡层，结果显示两种扩散阻挡层可以有效的防止铜向sio2层的扩散。
