| 1. | Moreover , the mechanism for the dissolution of oxygen precipitates by rtp is discussed
另外，计论了快速热处理消融氧沈淀的物理机制。 |
| 2. | Finally , the effect of rapid thermal process ( rtp ) on oxygen precipitation in hb is investigated in this paper
最后文章还系统研究了快速热处理( rtp )对重掺硼硅单晶中氧沉淀的影响。 |
| 3. | The influence of rapid thermal process in different gases on the photoluminescence properties of porous silicon was discussed
同时研究了在不同气氛下的快速热处理( rtp )对多孔硅发光特性的影响。 |
| 4. | Because of this , the behavior of impurities and defects in silicon during the rt p become a new research focus
这一应用使硅中杂质和缺陷在快速热处理过程中的行为的研究成为目前硅材料研究的新热点。 |
| 5. | The effect of high temperature in rapid thermal process ( rtp ) on the dissolution of oxygen precipitate generated by two - step ( low - high ) annealing is investigated
摘要通过对已经过两步（低高）退火的大直径直拉矽单晶片进行高温快速热处理，研究矽中氧沈淀被高温快速热处理消融的情况。 |
| 6. | It is verified that the high temperature in rtp can efficiently dissolve the existing oxygen precipitates , indicating that the annealing temperature other than time is the determinative factor for the dissolution of oxygen precipitates
研究证实：高温快速热处理可以显著地消融氧沈淀，氧沈淀消融的决定性因素是热处理温度。 |
| 7. | By rapid thermal processing ( rtp ) , high active atoms are excited while decomposing the gel precursor film , and consequently , much more contents of crystalline phase are obtained even at relatively lower temperature
通过快速热处理方法，在凝胶分解过程中得到的高活性离子直接形成晶相，可以在较低的温度下形成晶相及得到相应更多的晶体含量。 |
| 8. | Both hydrogen plasma and sinx thin film can effectively enhance the short circuit current density of mono and poly silicon solar cells , which cause the improvement of the absolute transfer efficiency about 0 . 5 % ~ 2 . 9 % . depositing sinx thin film followed by hydrogen plasma treatment will result in better passivation effect . the thickness of sinx thin film will decrease and the refractive index will increase after annealing
经过薄膜后退火处理发现，氮化硅薄膜经热处理后厚度降低，折射率升高，但温度达到1000oc时折射率急剧降低；沉积氨化硅薄膜后400oc退火可以促进氢扩散，提高钝化效果；超过400oc后氢开始逸失，晶体硅材料中的少子寿命急剧下降； rtp （快速热处理）处理所导致氢的逸失比常规退火处理显著。 |
| 9. | Although the diffusion of nitrogen and oxygen in silicon has been intensely studied respectively , the mechanism on in - diffusion of nitrogen and oxygen into silicon during rt p is unavailable . this research will provide theoretic direction for rtp application to defects engineering
尽管国内外对硅中氮、氧杂质的扩散行为进行了大量的研究，但他们在高温rtp处理过程中的内扩散行为在国内外的研究领域中至今仍是一个空白，这一研究将为快速热处理在硅材料缺陷工程中的应用提供理论指导。 |
| 10. | With the development of vlsi ( very large scale integration ) and ulsi ( ultra large scale integration ) , rtp ( rapid thermal process ) , which consumes less time and less energy than classical thermal treatments , have been widely employed in semiconductor manufacturing . however , the most importance is that rtp is applied for defects engineering of silicon material . it is generally believed the rtf leads to the injection of additional vacancies into silicon wafer , and then a so - called magic denuded zone ( mdz ) in the near - surface region of cz silicon wafer was formed by controlling the vacancy distribution
随着大规模集成电路( vlsi )和超大规模集成电路的发展，节省时间、节省能量、容易控制的快速热退火工艺在半导体器件制造工艺中得到了广泛的应用，并且在硅材料的缺陷工程中发挥了特殊的作用，人们通过高温快速热处理在硅片中引入空位，并控制空位的分布，进而形成了具有较强内吸杂能力的洁净区。 |
