| 1. | Zinc oxide is a material widely used in many areas
氧化锌是一种多用途的宽禁带半导体材料。 |
| 2. | Zno is a direct wide band - gap ii - vi semiconductor material
氧化锌是一种-族宽禁带氧化物半导体材料。 |
| 3. | Wide bandgap semiconductor
宽禁带半导体 |
| 4. | Wide bandgap emitter
宽禁带发射极 |
| 5. | The band gap calculation of wide - gap ternary compound nitride semiconductors in group
族宽禁带含氮三元混晶半导体禁带宽度的计算 |
| 6. | In recent years , zno has gained more and more attention as a wide band semiconductor
近年来， zno作为宽禁带半导体材料的研究越来越受到人们的重视。 |
| 7. | Zinc oxide ( zno ) is an important wide - band ( 3 . 37ev ) semiconductor with low dielectric constant
Zno是一种重要的宽禁带(常温下为3 . 37ev )低介电常数的直接带隙半导体材料。 |
| 8. | Zinc oxide is a ii - iv wide band - gap ( 3 . 37ev ) compound semiconductor with wurtzite crystal structure
氧化锌( zno )是一种具有六方结构的的宽禁带-族半导体材料，室温下能带带隙eg为3 . 37ev 。 |
| 9. | Zinc oxide ( zno ) is an interesting wide band gap ( 3 . 3 ev ) semiconductor material with a binding energy of 60 mev
氧化锌是一种重要的宽禁带隙（ 3 . 3ev ）半导体材料，它的激子束缚能高达60mev 。 |
| 10. | Zinc oxide , zno , a wide direct - gap semiconductor , attracts as much attention as gan in photoelectric research field
Zno ，作为一种直接带隙宽禁带半导体材料，是继gan之后光电研究领域又一热门的研究课题。 |
