| 1. | Specification for silicon epitaxial wafer for microwave power transistor
微波功率晶体管用硅外延片规范 |
| 2. | Electric parameter test of semiconductor epitaxy slice based on hall effect
基于霍尔效应的半导体外延片电参数测试 |
| 3. | Silicon extending slice
硅外延片 |
| 4. | The concrete work in this thesis : 1 ) fabrication of high response frequency sbd using thin si epi - layer
本文的具体工作可归纳为： 1 )薄硅外延片研制高频肖特基二极管的原型器件。 |
| 5. | B ) sbd was made using the si epilayer as the active layer , qualified with a set of device technology
B )在薄硅外延片的生长基础上，探索制作肖特基二极管的相关工艺，研制高频sbd原型器件。 |
| 6. | Podium was an oem of epitaxy wafer growth and chip processing for both nationally and internationally renowned electronic manufacturers
公司成立初期，主要为国内外知名半导体厂商生产外延片及芯片。 |
| 7. | A ) si thin film with sub - micro thickness was epitaxial grown on heavy - doped si substrate by ultra high vacuum chemical vapor deposition ( uhv - cvd )
A )利用超高真空化学气相沉积( uhv - cvd )技术在重掺si衬底上生长高晶体质量的亚微米级薄硅外延片。 |
| 8. | Si - based - luminescent crystal materials have very extensive and potential applications . however , high - quality epitaxial wafers are difficult to be grown on si substrate
Si基-族发光晶体材料具有极其广泛和潜在的应用前景，然而在si衬底上却难以生长出高质量的外延片。 |
| 9. | Thanks to the success of its led chip products , silan azure has received second - round investment to a capital of ? 150 million rmb and it will triple its production volume to 300kk chips / month by the end of year 2007
公司产品包括蓝、绿光氮化物半导体材料外延片和芯片两大部分，生产工艺技术已经达到国际水平。 |
| 10. | Based on the requirement of the device , we grow the films of silicon of high quality . the thickness of the epilayer is from 0 . 4 u m tol p m , the doping concentration can be controlled conveniently
然后，根据器件的要求，利用uhv cvd技术，生长出优质薄硅外延片，其厚度在0 . 4 m 1 m ，掺杂浓度可任意调节，晶体质量良好。 |
