| 1. | The simulation of device and relative experiments are all introduced in the dissertation
本论文的工作主要包括器件模拟和实验两部分。 |
| 2. | The simulation to the bccd proves that pisces is suitable for the for the ccd simulation
模拟实例表明器件模拟软件pisces完全适用于对ccd的模拟。 |
| 3. | Simulation mainly explains the transmission of light after through the surface - textured glass
器件模拟部分主要讨论了模拟光通过刻面玻璃后,光的透过率情况。 |
| 4. | A resistance macromodel for deep - submicron process epi - type substrate based on the 2d device simulation is presented
摘要提出了一种基于二维器件模拟的深亚微米工艺外延型衬底的电阻宏模型。 |
| 5. | Abstract : a hybrid algorithm for solving carrier transport equations ofsemiconductor device is presented in this paper
文摘:针对半导体器件模拟中载流子方程两种基本算法在高注入条件下的不足，提出了一种混合算法。 |
| 6. | Furthermore , its circuit structure is simple and it can be implemented easily in spice program for circuit simulations
此外，该宏模型结构简单，可以得到与器件模拟基本一致的模拟结果，并可以方便地嵌入spice中进行一定规模的电路模拟。 |
| 7. | Photoelectric characteristics of sicge / sic heterojunction diode were simulated using medici tools , and the simulation results are presented and discussed in this paper
在本文中，通过使用二维器件模拟软件medici ，对sicge sic异质结的光电特性进行了模拟。 |
| 8. | In this paper , we apply adi and high - order compact finite difference method for large - scale asymmetric sparse matrix in semiconductor device simulation
摘要采用adi与高阶紧致差分相结合的方法计算大型非对称稀疏矩阵，并实现了该算法在半导体器件模拟中的应用。 |
| 9. | It is described that the simulation system is applied in the exploitation of new semiconductor devices , and the advantages are shown if the behavior and process simulation are combined
简要阐述了半导体器件模拟软件在新器件开发中的应用，对性能模拟扩展与工艺模拟集成的优势作了简述。 |
| 10. | The macromodel is built up with the combination of device simulation and nonlinear curve fit , which makes the extraction of the substrate parasitic parameters more convenient and the circuit simulation more accurate
该宏模型通过器件模拟与非线性拟合相结合的方法建立，使衬底寄生参数的提取更加方便，同时保障了深亚微米电路特性的模拟精度。 |
