Chinese translation for "反应气体"

reactant gas
reacting gas
reaction gas

Example Sentences:

	1.	The explanation could lie in the sharp temperature jump a particle experiences when it becomes dispersed in a bubble of reactant gas . 其解释是当颗粒被分散于反应气体的气泡中时，经受着温度的突然跃升。
	2.	The power ofreactor pressure of gas were the important technologic parameters to affecting the purity and size of powders 等离子体发生器功率、反应气体压力或配比是影响产物纯度和粒度的主要工艺参数。
	3.	The reaction activity was influenced by the velocity of gas , and the conversion rate was inverse ratio to the velocity of flow 同时研究了反应气体流速对h _ 2s光催化氧化反应的影响， h _ 2s的去除率与流速成反比。
	4.	During the deposition of films , hydrogen facilitates the forming of cubic bn , but cubic bn will also weaken the combined intensity of films and substrates 反应气体中大量氢气的存在，有利于立方氮化硼的形成；但立方氮化硼的存在同样会影响到薄膜与衬底的结合强度。
	5.	In order to prepare high quality films , appropriate temperature and r . f . power should be selected , and moreover , the content of the hydrogen need be controlled 因此制备薄膜与衬底结合良好、较高质量的氮化硼薄膜，应在适当的沉积温度( 420 )和射频功率( 160w )下并适当控制反应气体中氢气的含量。
	6.	The enhancement of water wettability , better optical transparency , and higher wear resistance have been found after the samples were treated under high rf power , bias voltage and gas pressure conditions 在较高射频功率、基板负偏压、反应气体压强状态下制备膜层的润湿性、耐磨损性较好,而光学透过率较低。
	7.	Without using the doping of ge , plasma enhanced chemical vapor deposition ( pecvd ) of thick silica films on si substrates with gas mixtures of sih4 and n2o has been investigated 实验以硅烷和氧化二氮作为反应气体，采用等离子体增强化学气相沉积( pecvd )技术，在单晶硅衬底上制备了用于平面光波导的二氧化硅薄膜。
	8.	The synthesis of sic whisker is an interesting research activity . - sic whiskers have been grown on si substrate with ni film as its catalyst and a mixture of c2h2 - sih4 - h2 as precursor via chemical vapor deposition technique in this dissertation 本论文采用化学气相沉积方法,以ni薄膜为催化剂,以c2h2 、 sih4为反应气体,以h2为载气,在si基片上生长- sic晶须。
	9.	The properties of cn thin films such as their morphology , component , crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed , showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique , , the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed . the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process , based on this the growth mode of cn thin films on the si substrate is proposed . the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted , which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate 采用pld技术进行了碳氮化合物薄膜沉积，得到了含氮量为21at的cn薄膜；研究了衬底温度和反应气体压强对薄膜结构特性的影响，给出了cn薄膜中n含量较小、 sp ~ 3键合结构成分较少和薄膜中仅含有局域cn晶体的原因；引入脉冲辉光放电等离子体增强pld的气相反应，给出了提高薄膜晶态sp ~ 3键合结构成分和薄膜的含n量可行性途径；应用pe - cvd技术以ch _ 4 + n _ 2为反应气体并引入辅助气体h _ 2 ，得到了含n量为56at的晶态cn薄膜；探讨了cn薄膜形貌、成分、晶体结构、价键状态等特性及其与气体压强和放电电流的关系，证明了- c _ 3n _ 4薄膜沉积为满足动力学平衡条件的各种反应过程的竞争结果；采用光学发射谱技术对cn薄膜生长过程进行了实时诊断，得到了实验参量对等离子体中活性粒子相对浓度和气相反应过程的影响规律，给出了cn薄膜沉积的主要反应前驱物，揭示了cn薄膜特性和等离子体内反应过程之间的联系；采用高气压pe - pld技术研究了不同衬底温度条件下cn化合物薄膜的结构特性，揭示了si原子对薄膜生长过程的影响，给出了si基表面碳氮薄膜的生长模式；在金刚石研磨和催化剂fe处理的si衬底上进行cn薄膜沉积，证明了通过控制材料表面动力学条件可以改变碳氮薄膜结构特性，并可显著提高晶态碳氮材料的生长速率。
	10.	We combined the cvd technique with the pecvd technique by adding a dc or rf electric field to the reacting region of cvd device , and improved the inputting method of reaction gases , then had executed a diamond film growth system . the advantages of our system are : ( 1 ) reaction power , which can enhance the density of the plasma in the reacting region , is supplied with the heat filament and the dc electric field , or with the heat filament and the rf electric field both of them can be controlled precisely and they are complementary to each other 将热丝cvd技术与pecvd技术相结合，在薄膜的成核和生长阶段分别给反应区再施加一个直流和射频电场，同时改进反应气体的进气方式，制成具有下列两大特点的金刚石薄膜生长系统： ( 1 )反应功率由热丝和直流电场或热丝和射频电场共同提供，两者互相补充，可精确控制，大大提高了反应区的等离子体密度； ( 2 )能精确控制反应气体的分布、流量及流速。

Similar Words：

"反应器中形成槽路" Chinese translation, "反应器中形沟流" Chinese translation, "反应器转换器操作工" Chinese translation, "反应器着色聚合物" Chinese translation, "反应气" Chinese translation, "反应气体；活性气体" Chinese translation, "反应气相沉积" Chinese translation, "反应气相色谱" Chinese translation, "反应气相色谱法" Chinese translation, "反应钎焊" Chinese translation