| 1. | Preparation of semiconductor cubic boron nitride crystalline with silicon diffusion
硅掺杂半导体立方氮化硼单晶的制备 |
| 2. | Synthesis and characterization of the large single crystals of x zeolite containing functional complex
沸石大单晶的合成与表征 |
| 3. | A complication is that the films are strained and epitaxial , with hardly any defects
一个复杂因素是薄膜为应变和单晶的，几乎没有任何缺陷。 |
| 4. | Use ： used as an analytical reagent and an iodine solubility promoter , and to preparae monocrystal
用途：分析试剂。碘的助溶剂。制备单晶的原料。 |
| 5. | Influence of powder pressed pyrophyllite and its roasting technology on cbn monocrystal synthesizing
粉压叶腊石及其焙烧工艺对合成立方氮化硼单晶的影响 |
| 6. | Good theory explain also can be get from the simulation of 200mm solar cell czsi growth at 16 " heat system
从而对新型16 ”复合式热系统生长200mmczsi单晶的生长机理进行了比较好的理论解释。 |
| 7. | In this paper the band - gaps of the different concentration ge - doped czsi were measured , and the band - gap numbers were gotten
论文中对硅锗单晶的光学禁带宽度进行了测试，得出了掺锗不同浓度下禁带宽度值。 |
| 8. | The lattice parameter of obtained ultrafine ni powders is 0 . 35288nm which is larger than that of the perfect ni single crystal
Xrd精确测定所得超细镍粉的晶格常数为a = 0 . 35288nm ,比完整ni单晶的晶格常数大,晶格发生了膨胀。 |
| 9. | Using the single crystal x - ray diffraction ( scxrd ) method , we got the lattice constant , and found it was more than that of silicon
利用单晶x - ray衍射( scxrd )对czsige单晶的晶胞进行了测试，发现晶胞参数发生了明显的变化。 |
| 10. | Fabricated by optical floating zone consists of continuous nbssi + nbssia intermetallics and nb particles , which indicates that some nbasi particles have transformated in
）单晶的显微组织由连续的nb5si3金属间化合物和nb粒子组成， nb粒子长大并不明显。 |
