| 1. | Non - stoichiometry related deep level defects in semi - insulating inp
半绝缘磷化铟中与非化学配比有关的深能级缺陷 |
| 2. | Test method for microzone homogeneity of semi - insulating monocrystal gallium arsenide
半绝缘砷化镓单晶微区均匀性测试方法 |
| 3. | Test method for residual impurities concentration in microzone of semi - insulating gallium arsenide
半绝缘砷化镓剩余杂质浓度微区试验方法 |
| 4. | This kind of ladder earliest design idea comes from us , is half insulation type design
这种梯子最早的设计理念来自美国，为半绝缘式设计。 |
| 5. | Test method for carbon concentration of semi - insulating monocrystal gallium arsenide by measurement infrared absorption method
半绝缘砷化镓单晶中碳浓度的红外吸收测试方法 |
| 6. | Test method for deep level el2 concentration of undoped semi - insulating monocrystal gallium arsenide by measurement infrared absorption method
非掺杂半绝缘砷化镓单晶深能级el2浓度红外吸收测试方法 |
| 7. | In addition , it is generally accepted that the compensation of carbon acceptor by el2 donors is a main factor , which determines the semi - insulation property of undoped lec si - gaas single crystal
另外，目前普遍认为非掺si - gaas单晶的半绝缘特性是浅受主碳和深施主el2相互补偿的结果。 |
| 8. | Liquid encapsulated czochralski ( lec ) si - gaas is widely used in the microwave device and the substrates of high speed digital optic - electronic integrated circuits , and it has become one of major materials in information industry
液封直拉法生产的半绝缘砷化镓单晶( lecsi - gaas )被广泛用于微波器件和高频集成电路的衬底材料，成为当代信息产业的重要材料之一。 |
| 9. | In this paper , we implanted mn + ion of different dose into undoped semi - insulating ( 100 ) gaas substrate then performed rapid thermal annealing in different temperature and time . studied the different annealing condition dependence of the samples " structure , electrical and magnetic properties and the relation of the mn + forms and these properties
本课题采用离子注入的方法将不同剂量的mn ~ +注入到非掺杂半绝缘( 100 ) gaas单晶衬底中，然后进行不同温度和时间的快速热退火处理，研究了不同的退火条件对样品注入层的晶体结构、电特性和磁特性的影响以及mn ~ +在样品中的存在状态与这些性质之间的关系。 |
| 10. | The liquid encapsulated czochralski technique for growing gaas is receiveing considerable attention because it is capable of producing , at reasonable cost , large diameter semi - insulating gaas has a use in the production of gaas integrated circuits , and for this application it must have uniform properties over the whole area of a wafer cut from a grown crystal
目前，液封直拉技术生长gaas单晶获得了广泛关注，因为它能够以合理的成本生产大直径的半绝缘单晶。半绝缘材料是生产集成电路等微电子器件的良好材料，而这种应用就要求整个晶片具有很高的均匀性。 |
