| 1. | The lateral diffusion of the photo - carrier in photoconductor layer is one of the important factors of affecting the resolution of lclv
液晶光阀的分辨率与许多因素有关，而光导层光生载流子的横向扩散则是其中的重要因素之一。 |
| 2. | The field in large - aperture photoconductors is mainly composed of bias field , space - charge field formed by transient distributing of carriers
光电导体内的电场是偏置电场、光电导体内光生载流子的空间瞬态分布所形成的空间电荷电场等叠加形成的合电场。 |
| 3. | The one dimensional continuity equations of n - on - p planar pn junction are solved at different boundary conditions . generalized solutions of photocarrier concentration are given in this paper
摘要对一维情况下平面pn结的连续性方程进行了求解，给出了不同边界条件下光生载流子浓度的一般形式解，并对结果进行了分析讨论。 |
| 4. | It will be known from the obtained expression of the resolution of photoconductor that the column microstructure is benefit to reduce the carrier diffusion in the lateral direction and increase the resolution of the photoconductor
这种各向异性的柱状结构复合光导膜有利于减小光生载流子的横向扩散长度，从而可以提高液晶光阀光导层的分辨率。 |
| 5. | In this thesis , we described the principle of photon modulation , the model of photon induced careers and the model of carrier - induced index change . we analyzed the effect of 3 - d structure of waveguide to the lightwave in the waveguide
本论文首先阐述了光控制光开光的原理、光生载流子的模型，以及光生载流子影响折射率变化的模型，分析了三维波导的结构对传输光波的影响。 |
| 6. | The transfer of the carrier in photoconductor is anisotropy owing to the column structure of the film is anisotropy . on the basis of the new concept suggested in this paper , the maximum diffusion length in the lateral direction of the photo - carrier in the photoconductor ( which is related to the resolution of lclv directly ) as function of conductivities of both in lateral and normal directions in the film can be obtained as the expression as following . the nc - si / a - si : h photoconductor of lclv deposited and crystallized at low temperature of exactly 250 c stack column structure by al inducing a - si : h
本文根据柱状结构存在各向异性的特点，并根据半导体物理知识，推出光导层光生载流子横向最大扩散长度(该扩散长度与液晶光阀光导层分辨率直接相关)与薄膜横向和纵向电导率关系的表达式为：由于a - si ： h在al金属的诱导作用下在不高于250的温度下即开始晶化，本文对用金属al诱导非晶硅晶化制备的nc - si a - si ： h薄膜进行研究。 |
| 7. | By the analysis of the mechanism of charge carries transporting in the detector and the polarization effect of msm detector , we get : the polarization effect of cdse detectors is mainly caused by the poor transporting of charge carries ; to avoid the polarzation effect and improve the charge carries transporting property , the detector must has a suitable anode , so as to make a more suitable electrical field
此外，本文还通过分析探测器中的电荷输运机理，对具有msm结构的探测器的极化现象进行了定性的分析，指出光生载流子输运受阻是引起极化现象的原因之一，只有改变探测器的正极接触，从而改变探测器内的电场分布，改善载流子的输运特性，才能消除极化现象。 |
| 8. | The contact angle for water of the film which prepared according to above conditions is 4 ? ( 2 ) b plus voltage is 1 . 2kv ; sputtering time is 80min ; the target parameters are : 100 % anatase tio2 , the thickness is 6 . 5mm , the diameter is 53 . 5mm , the quality is 24 . 99g and the density is 1 . 71g / cm3 ; anode current is imax . the constant of reaction kinetics of the film which prepared according to above conditions for degrading methyl orange is 0 . 0192
Fe20 ;的摩尔含量为0 . 5 %时光催化活性最好;而在fezo3的摩尔含量为0 . 05一0 . 1 %时，获得了具有超亲水性能的复合薄膜;但fezo3 / tio :的叠层膜及复合叠层膜的光催化活性及亲水性能均不理想，主要原因是fezo3的存在具有光生载流子复合中心的作用。 |
