Chinese translation for "simox"

氧离子布植隔离矽晶

Example Sentences:

	1.	Effects of si ion implantation on the total - dose radiation properties of simox soi materials 材料抗总剂量辐照性能的影响
	2.	On the research of soi power switch ic , we proposal the devices based on epitaxial simox substrate 本文同时对基于该结构和屏蔽槽结构的soi高压复合结构进行了研究[ 2 - 4 ] 。
	3.	Up to present we have prepared the epitaxial simox substrate ( i layer 0 . 37um , silicon layer 2 . 8um ) , and done the circuit design , process integration , device simulation and some layout design ) 本项目目前已完成了simox外延衬底的制备（ i层0 . 37um ，外延硅层2 . 8um ） ，以及功率开关集成电路的电路设计，工艺设计和部分版图设计。
	4.	2 . in the first , the successfully fabricated si - based sets on p - type simox substrate are based on the process in china . the technology process is also offered for the controlled fabrication of single sets 利用这些纳米结构的制备技术，在p型simox硅片上成功地制造了硅量子点单电子晶体管，形成了一套制备硅单电子晶体管的工艺方法。
	5.	We propose a novel and simple y - branch configuration with simox soi wafers in order to achieve an asymmetric branching ration and low excess loss . the proposed structure only deviate the center axes of input taper wave - guides 我们用soi晶片设计了一种新型的y分支型功率分配器，此结构通过改变中心轴线的位移值即可实现不同的功率分配的功能。
	6.	We studied the resurf , trench - gate , 3d - resurf ldmos . we designed the power switch ic based on epitaxial simox substrate , satisfying the requirements of the user . this ic can sustain 60 ~ 80v shutdown voltage overshot 在此基础上，本文设计了性能满足用户要求的，基于esoi衬底结构的功率开关集成电路，该集成电路可承受60 ~ 80v的反向过冲电压，并具有过流，过压等保护电路。
	7.	Additional annealing experiments in nitrogen atmosphere revealed that the heavily damaged region with hydrogen - induced defects appears to be the adsorption center for the outside oxygen to diffuse into the silicon during the high - temperature annealing process , and consequently , broaden the thickness of the box layer . this important finding may provide a possible solution to reduce the cost of the conventional simox - soi wafers while maintaining a desirable box thickness 独特设计的氮气氛退火及分步退火实验证明了原注入样品的缺陷层中氢及氢致缺陷的存在使得在退火过程中加速外界气氛中的氧扩散进来，并成为强捕获中心使扩散进来的氧滞留于缺陷层从而促使氧缺陷层中的氧沉淀生长，加速了高温退火中的内部热氧化过程，从而形成了比传统相同剂量simoxsoi厚得多的氧化埋层。
	8.	The soi is of crystal quality and the box is uniform in thickness , with the interfaces of si / sioa / si smooth and sharp . we have systematically studied the dependence of the formed soi structure on the process parameters , such as ion energy , implantation dosage , substrate temperature , as well as the annealing temperature . with xtem , sims , srp , rbs , ir , raman , aes , xps and other characterization tools , it was found that a dose window at fixed energy for water plasma ion implantation to form high quality soi structure similar to the conventional simox process exists 本论文还系统地研究了不同注入剂量、注入能量、注入时基底温度以及退火温度对所形成soi结构性能的影响，借助xtem 、 sims 、 srp 、 rbs 、 ie 、 raman 、 aes 、 xps等测试分析手段，我们发现，与传统注氧隔离( simox )技术类似，存在着“剂量窗口”形成优质的soi材料，但在水等离子体离子注入方式中soi材料结构质量对剂量变化更为敏感，随着注入剂量的增大， soi材料的埋层厚度增大而表层硅厚度减小。
	9.	In the current experimental parameter range , thin and / or ultra - thin soi with thickness of 50 - 150nm and box of 70 - 180nm thick were obtained . compared to the conventional simox - soi , the soi materials manufactured by water plasma ion implantation at the same implantation dosage and ion energy have much thicker box layers 本论文一个重要发现是以水等离子体离子注入方式所形成埋层sio _ 2厚度得到了大幅度的展宽，相比传统simox法，其展宽幅度高达50 ，这一重要发现为降低注入时间和soi制备成本提供了有效的途径。

Similar Words：

"simovici" Chinese translation, "simovits" Chinese translation, "simovljevic" Chinese translation, "simovska" Chinese translation, "simovski" Chinese translation, "simozonotriletes" Chinese translation, "simp" Chinese translation, "simpa" Chinese translation, "simpach" Chinese translation, "simpadren" Chinese translation