| 1. | The refractory metals and refractory metal silicides that are used to augment or replace the polysilicon are generally deposited by physical vapor deposition processes .
用于增强和取代多晶硅的难熔金属和难熔金属硅化物通常是用物理蒸发沉积工艺沉积的。 |
| 2. | Investigation of the oxidation of mo3si - mo5si3 eutectic silicide
3共晶硅化物的氧化 |
| 3. | Formation of la silicides by mevva ion implantation
源离子束合成镧硅化物 |
| 4. | Study of nd silicides synthesis by mevva source ion implantation
源离子注入合成钕硅化物的研究 |
| 5. | Tribological properties of a laser - clad cr2ni3si cr3si metal silicide composite coating
金属硅化物复合材料涂层耐磨性研究 |
| 6. | Standard specification for refractory silicide sputtering targets for microelectronic applications
微电子设备用耐熔硅化物溅射电极 |
| 7. | While no evidence is found for the formation of er lii silicides at as - deposited surfaces
29ev以上，即相当于测得schottky势垒高度为0 |
| 8. | Test method for quantifying tungsten silicide semiconductor process films for composition and thickness
定量分析硅化钨半导体加工膜组分和厚度的标准试验方法 |
| 9. | Increase of oxidation temperature transforms more silicide , which was formed during deposition of hf , to silicate
，成为介于hfo 。薄膜和出衬底之间的界面层。 |
| 10. | The investigated anode materials include modified carbons , nitrides , silicides , oxides and novel alloys
研究的负极材料主要有：改性碳材料、氮化物、硅化物、氧化物和新型合金。 |
