| 1. | And the resistance will decrease with the increasing of the volume fraction of steel fiber
2 、试验研究了由cfrc和sfrc制成的水泥基pn结。 |
| 2. | 2 ) the cement - based pn - junctions are tested in experiments . experiments show that the cement - based pn - junctions have a good unilateral conductivity
水泥基pn结有良好的单向导电性，并且随时间的增加反向饱和电流越小。 |
| 3. | In order to comprehend schottky gate of organic static induction transistor , chapter two expatiates characteristics of pn junction and schottky junction
为了理解有机静电感应三极管的肖特基栅极原理，本文在第二章阐述了pn结和肖特基结的特性。 |
| 4. | The impacts of the substrate pn junction isolation on the inductor quality factor ( q ) are studied and experimental results show that a certain deep substrate pn junction isolation achieves good improvement
结果表明这种方法是可行的， b一一定深度的衬底pn结隔离能有效的使q值提高。 |
| 5. | The one dimensional continuity equations of n - on - p planar pn junction are solved at different boundary conditions . generalized solutions of photocarrier concentration are given in this paper
摘要对一维情况下平面pn结的连续性方程进行了求解，给出了不同边界条件下光生载流子浓度的一般形式解，并对结果进行了分析讨论。 |
| 6. | According to the analysis of physical quantities in the body , we got a conclusion that the effect of pn junction on schottky is through its depletion layer and the gap between two pn junctions
通过对器件体内各物理量的定量分析，得出pn结对肖特基的作用是通过其耗尽层和两pn结之间的间隙来影响肖特基的导电沟道这一结论。 |
| 7. | Because temperature is a factor in the " diode equation , " and we want the two pn junctions to behave identically under all operating conditions , we should maintain the two transistors at exactly the same temperature
因为温度出现在二极管方程中，为了让两个pn结在所有条件下都具有同样的行为，就必须让两者处在精确相同的温度下。 |
| 8. | This paper analyses the numerical simulation problems of the semiconductor devices deeply . a one dimensional pn junction diode is worked out satisfyingly by the recursive method with the matlab5 . 3 software
论文深入的分析了半导体器件的数值模拟问题，利用matlab5 . 3等计算机工具，用解三对角矩阵方程的递归算法，实现了pn结二极管的一维求解，取得了比较满意的结果。 |
| 9. | It also put forward that how to select appropriate epilayer doping concentration and thickness , pn junction depth and jte technology to increase the breakdown voltage of 4h - sic mps . a power dissipation model of 4h - sic mps was established
通过对4h - sicmps击穿特性的二维模拟，提出如何选择合适的pn结深度、外延层掺杂浓度和厚度以及如何运用jte终端技术来提高击穿电压。 |
| 10. | In the design of the device , a kind of junction termination technology , polysilicon field plate was introduced at the edge of source and drain of the device . it reduced the electric field of pn junction and nn + at the surface to avoid breakdown at the two points
在器件设计过程中,在源端和漏端都采用了多晶场板技术,减小了表面pn结和nn +处的峰值电场,避免了器件在这两处过早击穿。 |
