| 1. | A study on photosensitivity characteristics of ba1 - xsrxnbyti1 - yo3 thin film on sio2 si substrate
硅衬底ba1 - xsrxnbyti1 - yo3薄膜光敏特性的研究 |
| 2. | Type : the liquid state photosensitivity resistance welds anti - , hot solid welds , the ultraviolet ray solidifies anti - welds
类型:液态感光阻焊w f热固阻焊紫外光固化阻焊uv |
| 3. | After years of sunbathing ? all women did it back then ? veronica developed photosensitivity , and stayed pale all summer
晒了多年日光浴之后? ?那时候女人们都兴这个? ?维罗尼卡开始对太阳光过敏，整个夏天都是面色苍白。 |
| 4. | At the same time , we also found optical band gap decreases and photosensitivity of a - si : h films increases with the increase of substrate temperature
同时，我们也发现伴随着衬底温度升高，光学带隙减少，光敏性增加。 |
| 5. | Testing of materials for semiconductor technology - methods for the characterisation photoresists - part 2 : determination of photosensitivity of positive photoresists
半导体技术用材料的试验.表征光敏抗蚀剂的方法.第2部 |
| 6. | Analyze the fiber photosensitive mechanism , the way to enhance the fiber photosensitivity by means of hydrogen loading and related mathematical model ; 2
阐述了光纤光敏性的机理，以及光纤载氢增敏方法及其数学模型； 2 |
| 7. | Thus it is a urgent problem to understand exactly the effects of hydrogen - loaded condition on fiber photosensitivity and improve the performance of fbg
因此准确把握载氢条件对光纤光敏性的影响，提高光栅的性能已成为一个亟待解决的问题。 |
| 8. | For people with photosensitivity disorders , or anyone with a personal or family history of non melanoma skin cancer , any amount of extra sun exposure would be inadvisable
对于有光敏症的人们，或者有个人或家族缺黑素瘤皮肤癌历史的人，不建议进行任何量的额外阳光照射。 |
| 9. | So , the decrease of optical band gap and the increase of photosensitivity of a - si : h films is the result of the decrease of hydrogen content , especially incorporated as polydride
因此， a - si ： h光学带隙的减少以及光敏性的增加是膜中氢含量尤其是以多氢化合物结合的氢含量减少的结果。 |
| 10. | The a - si : h films have special photoelectric properties , and we analyze the effect of technology conditions of lbl method on the photosensitivity of a - si : h films . there are lots of lbl technology conditions
氢化非晶硅薄膜具有独特的光电特性,我们分析了采用lbl方法的制备工艺条件对氢化非晶硅薄膜的光敏性的影响。 |
