| 1. | Fabrication technology of microlens array by melting photoresist
微透镜阵列的光刻胶热熔制作技术 |
| 2. | The properties of a new photoacid generator for 193 nm photoresist
光致抗蚀剂用光产酸剂的性质分析 |
| 3. | Preparation of photoresist for analysis of inorganic contaminants
无机污染物分析用光致抗蚀剂的制备 |
| 4. | Adjusting photoresist exposure time
调整光电阻曝光时间 |
| 5. | Accelerated aging of photoresist
光致抗蚀剂的加速老化 |
| 6. | Specification for photoresist e - beam resist for hard surface photoplates
硬面感光板中光致抗蚀剂和电子束抗蚀剂规范 |
| 7. | Calculating the contrast and threshold sensitivity of a positive photoresist
计算正性光致抗蚀剂的对比度和阈限灵敏度 |
| 8. | Determining pinhole density in photoresist films used in microelectronic device processing
微电子器件加工过程用的光刻膜中针孔密度的测定 |
| 9. | Determining effective adhesion of photoresist to hard - surface photomask blanks and semiconductor wafers during etching
测定在蚀刻期间光致抗蚀剂同硬表面光掩膜坯及半导体片的有效粘附性 |
| 10. | With the third harmonic 355nm nd : yag laser as the exposal source , the lithography of su - 8 photoresist is studied
本文采用波长为355nm的三倍频nd : yag激光作为曝光光源,对su - 8光刻胶进行光刻研究。 |
