Effect of tube making technique for generation iii low - light - level image intensifier on photoemissive property of photocathode 三代微光像增强器制管工艺对阴极光电发射性能的影响
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With the aid of baffle movement , a technique named masking pretreatment and the method of vacuum deposition have been used to fabricate the ag - o - cs photoemissive thin films with internal field - assisted structure for the first time . the internal field - assisted photoemission characteristics of ag - o - cs thin films show that the photoelectric sensitivity is increased when the internal electric field is applied to the thin films , which indicates that the electric field has been effectively provided to the thin films by the above - mentioned internal field - assisted structure . such an enhanced photoemission is attributed to the variations in energy - band structure of ag - o - cs thin films , and which are considered to induce the lower - energy electrons to participate in the photoemission 通过掩膜预处理和挡板转移技术的配合，利用真空沉积方法首次制备了内场助结构ag - o - cs光电发射薄膜。 ag - o - cs薄膜内场助光电发射特性测试结果表明，该方法能够有效地实现ag - o - cs薄膜体内电场的加载与表面电极的引出，薄膜光电灵敏度随内场偏压的增大而上升。 ag - o - cs薄膜在内场作用下的光电发射增强现象与薄膜体内能带结构变化低能电子参与光电发射等物理机制有关。
