| 1. | Study on new p - n junction termination technique
结终端技术的研究 |
| 2. | P - n junction semi - conductor laserp n
结半道体激光器 |
| 3. | P - n junction electroluminescencep n
结电致发生 |
| 4. | P - n junction edge effectp - n
结边际效应 |
| 5. | P - n junction photodiodep n
结电二极管 |
| 6. | P - n light emitterp - n
结光发射体 |
| 7. | The other series is p - n , n - dimethlaminobenzates ( ( ch3 ) 2nc6coor , r = n - cnh2n + 1 , n = 1 , 2 , . . . 8 )
另外，本论文还合成了另两个小分子系列有机化合物。 |
| 8. | 2 ) the p - n heterjunction effects between b - implanted diamond films and n - type si substrate was investigated
2 )研究掺b的金刚石膜和n型si衬底之间的半导体p - n结效应研究。 |
| 9. | Comparing with p - n junction , sbd is a majority carrier device . it has low break - over voltage , and can be used at high frequency
与p - n结相比，它是一种多子器件，具有正向导通电压低，使用频率高等特点。 |
| 10. | Detail specification for low power silicon n - p - n switching transistors - 65 v , planar epitaxial , ambient rated , hermetic encapsulation - full plus additional assessment level
小功率硅p - n - p型开关晶体管详细规范. 65v平面外延额定环境条件密封封装.全面附加评定级 |
