| 1. | P - channel charge - coupled dcvice p
信道电荷耦合装置 |
| 2. | P - channel metal - gate process p
通道金属门处理 |
| 3. | P - channel metal - gate process
通道金属门处理 |
| 4. | Semiconductor discrete device . detail specification for type cs139 silicon p - channel mos enhancement mode field - effect transistor
半导体分立器件. cs139型硅p沟道mos增强型场效应晶体管详细规范 |
| 5. | Semiconductor discrete device . detail specification for type cs5114 cs5116 silicon p - channel deplition mode field - effect transistor
半导体分立器件. cs5114 cs5116型硅p沟道耗尽型场效应晶体管详细规范 |
| 6. | Especially because of p - si tft having the characteristic of working with p - channel and n - channel , it could be used in lcd display and oled display
其中p型和n型的导电模式不仅可以实现lcd的驱动,而且也可以实现oled的驱动。 |
| 7. | A complementary input stage , which consists of a p - channel pair and a n - channel pair , was used in the circuit , so that the common mode input range can extend from rail to rail . a dcls is used to shift the n - transistor curve leftward to overlap the p - transistor curve properly and keep constant transconductance in the whole common mode input range
输入级采用pmos差分输入对和nmos输入差分对并联的结构，从而实现共模输入范围扩大到电源的正负两端，并且通过两个源级跟随器平移nmos输入管跨导曲线，使nmos输入管和pmos输入管跨导曲线的适当交叠，从而保持了这个输入级的跨导在整个共模输入范围内保持恒定。 |
