| 1. | Researched the methods to test interconect resource ( ir ) witch include interconnect lines and nmos switchs
研究完成了对互连资源( configrableinterconnectresource )的测试。 |
| 2. | Semiconductor integrated circuits . detail specification of type jm2148h nmos 1024 4 bit static random access memory
半导体集成电路. jm2148h型nmos 1024 4位静态随机存取存储器详细规范 |
| 3. | This is due to the fact that each transistor in a cmos circuit is actually made from a pmos transistor and an nmos transistor
这是由于cmos里的每一个晶体管都是由一个pmos和一个nmos晶体管组成的。 |
| 4. | The use of edgeless nmos transistors in place of 2 - edgeless transistors eliminates the excessive radiation - induced edge leakage in many cmos parts after irradiation
为了测试最新设计的1万门cmos门阵列的抗辐射水平，本文设计了一个cmos集成电路测试样片。 |
| 5. | In order to get strain from the channel , by process , deposit si3n4 at nmos and adopt the silicon - germanium epitaxy on source / drain by pmos , can effective improve nmos and pmos electronic characteristic
中文摘要近年来，为了提升金氧半场效电晶体工作频率及性能，尺寸不断微缩，让相同面积晶片可以拥有更多的电晶体数量。 |
| 6. | Especially in cmos n - well integrated circuits technology , the body effect will cause the nmos threshold voltage following the pumping voltage to be lifted and then the highest pumping voltage will be limited
特别是在n阱集成电路工艺，体效应使得每一阶nmos管的阈值电压都不断抬升，以至于电荷泵的最高输出电压受到限制。 |
| 7. | Besides , silicon substrate is bent by applying external mechanical stress , the lattice of channel will have strain due to uniaxial tensile stress by nmos and strain due to uniaxial compressive stress by pmos
但微影技术已经接近瓶颈，所以我们必须另外寻找能够提升电晶体效能的方法，应变矽就是目前提升电晶体性能最热门的方法。 |
| 8. | We simulated and adjusted the energy and dose of implant impurity by the aid of silvaco software so as to confine the vt value in a reasonable range and finally we got eligible device samples
最后，我们基于silvaco软件模拟并调节了杂质注入的能量和剂量，并结合实验结果调整了pmos管和nmos管的阈值电压，制备出了合格的bmhmt工作模式的soi异质结mosfet单管。 |
| 9. | Here we take the strained si cap layer with relaxed sige layer grown epitaxially by uhvcvd to form nmosfet and relaxed si cap layer with strained sige layer to form pmosfet as comparison to bulk sample
在论文中我们给出了两种不同的材料结构来与体si材料进行比较，用应变的sicap层和弛豫的sige材料层构建nmos管，用弛豫的sicap层和应变的sige材料层构建pmos管。 |
| 10. | In the third chapter , a methodologies to realize second - order band - pass filter with which center frequency tuned in a wide range using mcdi ( multiple output current - mode differential integrator ) , these two kinds of mcdi are composed of pmos and nmos input transistors respectively , lastly we compare these two integrators " merits and disadvantages
第三章：提出了输入级分别为pmos管、 nmos管的多输出端电流模式全差分积分器，并由此构成了中心频率连续可调的二阶带通滤波器，同时比较了二者的优缺点。 |
