| 1. | When a metal is brought into contact with an n-type semiconductor, electrons will flew from the semi-conductor to the metal . 使一块金属与n型半导体接触时,电子将从半导体流到金属。 |
| 2. | This voltage creates a field across the gate oxide, which causes the adjacent p substrate to invert to n-type . 这一电压在栅极氧化物层上产生一个电场,它导致毗邻的P型衬底转变成N型。 |
| 3. | The synthesis and thermoelectric properties of n - type skutterudite compounds 12的热电性能研究 |
| 4. | The temperature change during reaction of n - type metal oxide gas sensor 型金属氧化物气敏元件的反应温变 |
| 5. | Preparation and thermoelectric properties of n - type la0 . 9nixco4 - xsb12 compounds 12化合物的制备及热电性能研究 |
| 6. | Electronic raman scattering in n - type - alloy semiconductors at low temperatures 型合金半导体的低温电子喇曼散射 |
| 7. | Detection of n - type protein 熟料n型蛋白试验 |
| 8. | N - type oxide gas sensor , n 型氧化物气敏元件 |
| 9. | N - type oxide gas sensor 型氧化物气敏元件 |
| 10. | Theory of reaction kinetics and statistical distribution of point defect of n - type metal oxide 型金属氧化物点缺陷的统计分布 |