More often, all of the materials exposed to the etchant have a finite etch rate . 通常，所有暴露在刻蚀剂中的材料都具有一定的刻蚀速率。
2.
This etchant can show different defects , such as dislocations , grain boundaries , twins , te - rich inclusions and precipitates etc . , on different planes 这种腐蚀剂能显示不同晶面上的多种缺陷，如位错、晶界、富te相等。
3.
The addition of surfactant to etchant can protect surface from intense dissolution , and keep a relative similarity of dissolving activity between surface and tunnel walls . in order to gain a satisfactory enlargement of tunnels , the etchant temperature should be controlled at 70 - 90 3a / cm ，严重，使比容降低;溶液中添加表面活性剂可以有效地抑制表面溶解，提高比容;适宜的扩孔条件为:温度80oc ; h +浓度lmol / l0
4.
The relationship between capacitance and corrosion conditions in the enlargement of tunnels justifies the latter competition mechanism the varied etching conditions were implemented by enhancing the passivating characteristics and viscosity , changing the a13 + concentration , temperature of etchants and current pulsation . passivating acid in the etchant is conducive to the instant passivation of exposed areas on the foil surface , and hence sustains the balance of competition between aggressive anions and passivators , providing pit nucleatiori sites continuously 通过侵蚀液中添加草酸、硫酸、乙二醇，改变侵蚀液al ~ ( 3 + )浓度和电流纹波等方法，研究了不同的侵蚀条件对隧道孔形貌和比容的影响，结果表明：草酸和硫酸既保护了铝箔表面又促进了隧道孔孔壁的迅速钝化，增加发孔密度。
5.
In this paper , the flow pattern defects ( fpds ) were revealed by secco etchant and their shape , distribution on wafer and tip structure were studied in details by optical microscope and atomic force microscope ( afm ) . the relationship between etching time and the tip structure of fpds was also discussed . furthermore , by studying the effect of rapid thermal annealing ( rta ) on the density of fpds in ar , the annihilation mechanism of fpds was discussed in this paper 本文将cz硅单晶片在secco腐蚀液中择优腐蚀后，用光学显微镜和原子力显微镜对流动图形缺陷( flowpatterndefects , fpds )在硅片中的形态、分布及其端部的微观结构进行了仔细地观察和研究，并讨论了腐蚀时间对fpds缺陷端部结构的影响；本文还通过研究ar气氛下快速退火( rapidthermalannealing , rta )对fpds缺陷密度的影响，初步探讨了fpds的消除机理。
6.
Based the eag - i etchant , a new etchant was developed , with which the etch pit pattern on ( 110 ) , ( 111 ) and ( 100 ) faces of czt crystals can emerge immediately and effectually . this pager investigated relation between the ( 110 ) faces of cutting from crystals conveniently and accurately by laser reflex method . by the surface treatment , the nuclear radiation detector was fabricated with ( 110 ) of czt crystal and strong 241am responsibility was observed 在改变e _ ( ag )腐蚀液的配方的基础上，研制了新的腐蚀液，可方便、快速、有效的显示czt不同晶面的缺陷蚀坑形貌;研究了利用激光正反射法和自然解理的不同( 110 )面之间的关系，方便、快速、准确的进行定向切割晶体的方法;采用生长的czt单晶体自然解理的( 110 )面，经过表面处理，试制了探测器元件，对24lam有较强的响应。
