| 1. | The point seed growth techniques of high quality dkdp crystal in all directions have these features of fast growth rate , high utilization ratio and low growth cost
点状籽晶全方位生长dkdp晶体的方法具有生长速度快、晶体利用率高、生长成本低的特点。 |
| 2. | The growth solution was adjacent to the most stability in virtue of the overheating time beyond 20 hours and overheating temperature beyond 15 * c of the saturation temperature of dkdp crystal growth solution
过热温度比饱和温度高15 ，过热时间达到20小时，溶液的稳定性接近最大。 |
| 3. | The dkdp crystal with dimensions of 34 ' mmx 36mmx 45mm and weight of 99g was successfully grown with the growth rate of 4 . 5 mm / day in glass crystallizer of 1000ml in volume
在1000ml生长瓶中获得了生长速度达4 . 5mm day的点状籽晶生长尺寸为34 36 45mm ~ 3 ( 99克)的优质dkdp晶体生长条件。 |
| 4. | The growth mechanism of dkdp crystal was described by the formation , diffusion and adsorption of growth unit of dkdp crystal . the method of increasing the growth rate was discussed
从dkdp晶体生长基元的形成、扩散、吸附等方面研究了dkdp晶体生长的微观机制，提出了提高晶体生长速度的具体方法。 |
| 5. | The grown solution of dkdp crystal was synthesized firstly , then the relationship between concentrations of metal ion impurities and critical supersaturation was discussed by the measurement of metal ion impurity concentrations
本文首先合成了dkdp晶体生长溶液，测定了合成溶液中部分杂质金属离子的含量，讨论了杂质金属离子浓度和临界过饱和度之间的关系。 |
| 6. | By analyzing the difference on ( loo ) and ( 110 ) face in the structure of dkdp crystal , the different of uv - vis transmission spectra and the different of concentrations of metal impurities in different part of dkdp crystal was explained
通过分析dkdp晶体的原子结构以及柱面和锥面的原子结构差别，解释了晶体柱面和锥面杂质金属离子含量差别的原因以及其与紫外可见透过光谱的关系。 |
| 7. | The uv - vis transmission spectra and concentrations of metal ion impurities in different part of dkdp crystal was measured . the results show concentrations of metal ion impurities on the ( 100 ) face is higher than that on the ( 110 ) face and absorption on the ( 100 ) face is bigger than that on the ( 110 ) face
通过测试点状籽晶生长dkdp晶体不同部分杂质金属离子的含量和紫外可见透过光谱，结果发现dkdp晶体柱面的杂质金属离子含量比锥面高，柱面的紫外可见吸收比锥面大。 |
| 8. | The results of property test of dkdp crystal grown on a point seed show that laser damage threshold is about 5gw / cm2 , ? half - wave voltage is about 4kv , extinction ratio is about 1600 : l . the obvious difference of dkdp crystals is not found between traditional technique and point seed growth technique
性能测试结果表明，点状籽晶全方位生长的dkdp晶体的激光损伤阈值约为5gw cm ~ 2 、半波电压约为4kv 、动态消光比约为1600 ： 1 ，发现与传统方法生长晶体的性能没有明显的差别。 |
