| 1. | Deposition and characterization of aln thin films on silicon
薄膜制备技术与测试分析 |
| 2. | Ti metallization of aln surface by molten salt reaction
陶瓷表面金属化研究 |
| 3. | Electroless plating method is applied to metallize the aln sbstrate
应用化学镀镍的方法实现了氮化铝的金属化。 |
| 4. | Aluminum ( al ) and aluminum nitride ( aln ) thin films have many advantages
铝及铝的化合物具有许多优良的性质。 |
| 5. | With the xrd spectrum , it shows the aln thin films have orientation growth with ( 100 ) and ( 110 )
X射线衍射结果表明氮化铝薄膜具有( 100 )和( 110 )面择优取向。 |
| 6. | Study on transmittance of zno based on transparent thin - film transistor with complex insulative buffer layer of al2o3 aln
附银二氧化钛光催化剂的制备及其光催化活性研究 |
| 7. | The xps results were found that the aln thin films grow in higher substrate temperature has a higher purity of aln
Xps分析表明,薄膜中氮化铝的纯度随着基片温度的升高而增加。 |
| 8. | Low sheet resistance and good matching between substrate and paste are the principal requirements for conductor paste in multi - layer cofire substrate
共烧导带浆料与aln生坯之间的烧结应力是造成基板失效的原因。 |
| 9. | We need to start their sintering at same temperature and to ensure conductor paste and green - sheet ceramic bodies have the same shrinkage rate
为了消除二者之间的烧结应力，共烧导带浆料与aln生坯必须同时进入烧结状态，具有相同的收缩特性。 |
| 10. | The results indicate that it has an excellent surface . aln thin film was prepared from an aluminum target by dc and af reactive magnetron sputtering in nitrogen gas mixed with argon gas
氮化铝薄膜样品是利用高纯铝靶,在氮气加氩气气氛下用直流和射频反应磁控溅射法制备的。 |
