重掺杂层 meaning in Chinese

heavily doped layer

According to our theoretic analysis and the realistic fabricating condition , the boa device with double - heterostructure gaas / gaalas has been proposed to obtain 3db bandwidth greater than 2 . 5 ghz , half - wave voltage about 5v , extinction - ration less than - 40db , transmission loss of tm mode greater than 45db and transmission of te mode less than 0 . 15db . to obtain higher switching speed , we proposed that traveling - wave electrode is applied to boa device
我们选择在sigaas衬底上生长重掺杂层，通过控制其厚度来设计速度匹配的boa光开关行波电极，实现boa光开关的高速和高带宽，本文结合boa型光开关的特点提出一种行波电极型boa光开关结构，其理论3db调制带宽大于20ghz 。