重掺杂 meaning in Chinese
heavily dope
heavy saturation
Examples
- The result is showed that the value of square resistence is 30 . 2 o in heavily doping area and 100 . 2o in lightly doping area
实验结果显示，重掺杂区和轻掺杂区的平均方块电阻分别为30 . 2和100 . 2 ，相差70 。 - The abrupt heterojunction diode is composed of a 1 m thick heavily doped n - type sic layer and a 0 . 4 m thick lightly doped p - type sic1 - xgex layer with varied composition ratios
在这个异质结中， n型重掺杂3c - sic层的厚度为1 m ， p型轻掺杂sicge层厚度为0 . 4 m ，二者之间形成突变异质结。 - In the experiment we also observed negative differential resistance characteristics of gesi hbts with heavily doped base at high collector - emitter voltage and high current . a new interpretation to this phenomenon was given . this
在实验中我们还观察到，在高vce和大电流下，重掺杂基区gesihbt出现负阻现象，我们对这一现象进行了新的解释，认为这是由热电负反馈导致的。 - The n / n + and p / p + epitaxial structures , which become popular with the development of coms technology , because they can avoid the latch - up and a softerror of ulsi while they combined with the intrinsic gettering ( ig ) technique
Coms工艺中普遍采用n / n ~ + 、 p / p ~ +的外延结构，这种以重掺杂硅片为衬底的外延结构与内吸杂工艺相结合，是解决集成电路中的闩锁效应和粒子引起的软失效的有效途径。 - But there are still several problems concerning the stability and reproducibility of device fabrication . the heavily born doped p - type diamond films synthesized by hot filament chemical vapor deposition with b ( ch3 ) 3 as boron source substituted the metal electrode aluminum
本文还利用热灯丝化学汽相沉积( hfcvd )法，采用硼酸三甲酯b ( ch3 ) 3为硼源制备了重掺杂p型金刚石膜，作为lppp / alq异质结增强型发光器的电极。