电荷区 meaning in Chinese
charged region
Examples
- The influence of incomplete ionization of impurity in 6h - sic on mosfet electrical characteristics is investigated considering the frenkel - pool effect , which can enhance the impurity ionization by lowing the effective barrier height
把frenkel - pool效应引入了对sicmos表面空间电荷区杂质不完全离化的分析，并建立起了在电场作用下sic杂质离化的新的模型。 - Because of the great potential of sic mosfets and circuits , in this paper , the characteristics of 6h - sic pmosfets are studied systematically , emphasizing on the effects of interface state and s / d series resistance on sic pmosfets firstly , the crystal structure of silicon carbide , the phenomena of incomplete ionization of the impurity and the fitting formula of hole mobility are presented . the characterization in space - charge region of sic pmos structure is analyzed by solving one dimension poisson equation
研究了sic的晶体结构，分析了sic中杂质的不完全离化现象以及sic中空穴迁移率的拟和公式；用解一维poisson方程的方法分析了sicpmos空间电荷区的电特性；本论文重点分析了界面态分布和源漏串联电阻对sicpmos器件特性的影响。 - In respect of sic devices , an analytical model of 6h - sic jfet to well match the experimental results is proposed . the radiation response of sic jfet in room temperature to 300 c is simulated with the analysis for the neutron irradiation effect such as carrier removal , mobility degradation and space charge density decrease
对sicjfet的电参数如电子浓度，迁移率，电阻率和空间电荷区密度在中子辐照下的变化进行了分析，提出了中子辐照下6h - sicjfet的器件模型，利用此模型对sicjfet在室温和300时的辐照响应进行模拟的结果和实验值相符。