层电荷 meaning in Chinese
layer charge
Examples
- Influence of chemical surface treatment on charge storage stability for miniature si3n4 sio2 electret film
化学表面处理对微型化的氮氧化硅驻极体层电荷储存性能的影响 - And a new numerical charge - sheet model for sic mos inversion layers is presented based on an numerical solution of a one - dimension poisson equation
文中还提出了一个新的sicmosfet反型层薄层电荷数值模型。 - Author analyzed the relationship between the length and the impurity concentration of drift region and thickness of buried oxide layer and thickness of soi and the charges of oxide layer and bias voltage of bulk and breakdown voltage and on - resistance by numerical simulation
采用数值模拟分析方法,深入研究了漂移区长度、漂移区浓度、埋氧层厚度、顶层硅厚度、氧化层电荷以及衬底偏压对resurf效应、击穿电压和导通电阻的影响。 - It is shown in mechanism analysis that 1 / f noise originating from border traps is ~ sensitive to both of the oxide charges and interface traps induced by esd and hci and the similarity coefficient can express the local characterization more thoroughly , while the changes of electrical parameters usually lie on one of the defects
机理分析表明，起源于边界陷阱的1 / f噪声对于静电和热载流子诱发的氧化层电荷和界面陷阱两类缺陷都同时敏感，而相似系数更能反映1 / f信号的局域特性，但电参数的变化通常主要取决于其中一类缺陷。 - In this paper , the effect of interface properties of sio2 / sic on performances of n - channel sic mofet are studied systematically : incomplete ionization of impurity in sic is analyzed based on the crystal structure of sic materials . the effect of incomplete ionization of impurity on c - v characteristics of p - type 6h - sic mos is researched based on charge - sheet model for sic mos inversion layers
本文就sio _ 2 / sic界面质量对n沟sicmosfet性能的影响做了深入的研究：从碳化硅材料的晶体结构出发分析了碳化硅材料中杂质的不完全离化，采用sicmos反型层薄层电荷数值模型，研究了杂质不完全离化对p型6h - sicmosc - v特性的影响。