电子陷阱 meaning in Chinese
electron traps
Examples
- As shallow electron traps ( sets ) dopants , the action of k4fe ( cn ) 6 that can increase photoelectron lifetime and photographic efficiency is analyzed . optimization concentration of k4fe ( cn ) 6 in cubic agcl emulsion is affirmed
分析了k _ 4fe ( cn ) _ 6掺杂物作为一种浅电子陷阱掺杂剂对于提高光电子寿命、改善感光性能的作用机理。 - By analyzing the influence of iodide on photoelectron lifetime , the optimization iodide level and doping position that can increase photoelectron lifetime for agcl and agbr emulsion of different crystal structure is obtained
通过对碘化物掺杂作为缺陷电子陷阱对光电子寿命影响的研究，对于不同晶体结构的卤化银乳剂得到了能使光电子寿命达到最大的优化掺杂条件。 - On this condition , based on the experimental results gotten by the microwave absorption dielectric - spectrum measure technique , the photographic process at room temperature in agcl cubic microcrystals doped with k4fe ( cn ) 6 is simulated . through the optimization of simulating parameters , not only the cross - section and trap depth of the shallow electron trap induced by the dopant , but also the optimal doping amount is obtained
在此基础上，以微波吸收介电谱检测技术的实验结果为依据，对掺有k _ 4fe ( cn ) _ 6的agcl立方体微晶在室温下的曝光过程进行了模拟，通过调节模拟参数，不但计算出由掺杂剂引入的浅电子陷阱的俘获截面和陷阱深度，而且得到了这种掺杂乳剂的最佳掺杂浓度。