陷阱电荷 meaning in Chinese
trapped charge
Examples
- Important results are derived in measuring and calculating trap density in this dissertation
本文在陷阱电荷密度的测量和计算方面取得重要结果。 - A model of the sic pn junctions irradiated by neutron is presented . the effects of radiation induced oxide trapped charge and sic / si02 interface state density on inversion layer mobility is studied systematically
在辐照的电离效应方面，研究了辐照在sicmos氧化层中引入的陷阱电荷对mos沟道反型层迁移率的影响。 - To analysis the principle of degradation and destruction , a reasonable relationship between the electrostatic potential and 1 - v characteristic parameters is raised ; a computation model for electron trap effect is originally proposed , which leads to a conception of critical trap electron density
本文首次建立了晶界势垒高度与伏安特性参数之间的关系，提出了陷阱效应在冲击老化过程的作用模型，引入了“临界陷阱电荷密度”的概念。 - Firstly , the theories relative to radiation effect are discussed in brief , including some models of interface trap formation and process of producing oxide trap charge in radiated mos devices . besides , the radiation effects at low dose rate and the mechanism of radiation hardening for bf2 implantation are reviewed too
首先，对有关辐照效应的理论进行了简要的叙述，介绍了辐照过程中氧化物陷阱电荷的产生过程以及界面态建立的一些模型，另外，还对低剂量率辐照效应以及bf _ 2 ~ +注入加固mos器件的机理做了回顾。 - The main points include : the bias electric field and the charges in the traps are the main reasons to generating hot electrons , the number and the kinetic energy of hot electrons are determinative for damage degree of ga ? s bands , relaxation degree of ga ? s network reflects the degree of breakdown , and the number of the detrapping of trapped electrons reflects the degree of restoration
其主要作用机制为:偏置电场和陷阱电荷电场可产生大量热电子，热电子的数量和动能决定ga一as键的损坏程度， ga一as的断裂程度反映pcss ’ s的击穿类型，而退陷电荷的数量则反映了pcss ， s可恢复损伤的程度。