漏极 meaning in Chinese
drain channel junction
drain electrode
drain substrate junction
Examples
- In fet devices , the presence of an electrical field at the gate moderates the flow between the source and drain
在fet器件中，栅极电场的存在会调节源极和漏极之间的电流。 - Ti ? the resistance measured across the channel drain and source ( or input and output ) of a bus - switch device
测量总线开关器件指定通道的源漏极间(或输入和输出)所得到的阻抗。 - Quasi - static capacitance has been measured , when drain voltage is 0v , and gate voltage changes from ? 5v to 0v , the surface peak
采用应力测试方法,获得了algan / ganhemt漏极电流随时间的变化。 - Under hot carrier stress , device degradation is the consequence of hot carrier induced defect generation locally at drain side
在热载流子应力条件下,器件的退化主要是由于在漏极附近由热载流子产生的损伤缺陷引起的。 - In the fifth chapter the shunt negative feedback is presented , and a low noise amplifier whose operating frequency is 0 . 2ghz 2ghz is developed
第五章分析了漏极并联负反馈在宽带低噪声放大器设计中的作用和原理,并设计、制作了0 . 2ghz 2ghz低噪声放大器。